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公开(公告)号：US20070183179A1
公开(公告)日：2007-08-09
申请号：US10567241
申请日：2004-08-03
申请人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue , Makoto Ochi
发明人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue , Makoto Ochi
IPC分类号： G11C5/00
CPC分类号： G06F3/0659 , G06F3/061 , G06F3/0632 , G06F3/0679
摘要： A card information-storing portion is provided in a semiconductor memory card, and information relating to access performance such as access condition and access rate is held in the storing portion. Further, an access device acquires the held information from the semiconductor memory card to make it possible that the information can be used for control of a file system. This optimizes processing of the access device and the semiconductor memory card independent of differences in characteristics of semiconductor memory cards and management methods used, realizing high-rate access from the access device to a semiconductor memory card.
摘要翻译： 在半导体存储卡中设置有卡片信息存储部分，并且存储与存取条件和访问速率有关的访问性能的信息被保存在存储部分中。 此外，访问装置从半导体存储卡获取保持的信息，使得该信息可以用于文件系统的控制。 这优化了访问设备和半导体存储卡的处理，而与半导体存储卡的特性差异以及使用的管理方法无关，实现了从访问设备到半导体存储卡的高速率访问。
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2.发明申请Semiconductor memory card, semiconductor memory control apparatus, and semiconductor memory control method 有权半导体存储卡，半导体存储器控制装置和半导体存储器控制方法公开(公告)号：US20060221719A1
公开(公告)日：2006-10-05
申请号：US10553725
申请日：2004-09-13
申请人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue
发明人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue
IPC分类号： G11C7/10
CPC分类号： G06F12/0246 , G06F3/0611 , G06F3/0625 , G06F3/0658 , G06F3/0659 , G06F3/0688 , Y02D10/154
摘要： A host information memory is provided in a semiconductor memory card and a data write start address and a data size supplied by an access unit are stored. A free physical area generation section determines whether or not to perform erasing of an invalid block of a nonvolatile memory when writing of data based on the data write start address and data size, and determines the number of blocks to be erased. When erasing, writing of data and erasing of invalid blocks are simultaneously performed with respect to different memory chips. Erase process of data, herewith, can be optimized and high speed access from the access unit to a semiconductor memory card can be realized.
摘要翻译： 在半导体存储卡中提供主机信息存储器，并且存储由访问单元提供的数据写入起始地址和数据大小。 空闲物理区域生成部分基于数据写入开始地址和数据大小来确定在写入数据时是否执行非易失性存储器的无效块的擦除，并且确定要擦除的块的数量。 当擦除时，相对于不同的存储器芯片同时执行数据的写入和无效块的擦除。 可以优化数据的擦除处理，并且可以实现从存取单元到半导体存储卡的高速访问。
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公开(公告)号：US08161225B2
公开(公告)日：2012-04-17
申请号：US10567241
申请日：2004-08-03
申请人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue , Makoto Ochi
发明人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue , Makoto Ochi
CPC分类号： G06F3/0659 , G06F3/061 , G06F3/0632 , G06F3/0679
摘要： A card information-storing portion is provided in a semiconductor memory card, and information relating to access performance such as access condition and access rate is held in the storing portion. Further, an access device acquires the held information from the semiconductor memory card to make it possible that the information can be used for control of a file system. This optimizes processing of the access device and the semiconductor memory card independent of differences in characteristics of semiconductor memory cards and management methods used, realizing high-rate access from the access device to a semiconductor memory card.
摘要翻译： 在半导体存储卡中设置有卡片信息存储部分，并且存储与存取条件和访问速率有关的访问性能的信息被保存在存储部分中。 此外，访问装置从半导体存储卡获取保持的信息，使得该信息可以用于文件系统的控制。 这优化了访问设备和半导体存储卡的处理，而与半导体存储卡的特性差异以及使用的管理方法无关，实现了从访问设备到半导体存储卡的高速率访问。
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4.发明授权Semiconductor memory card, semiconductor memory control apparatus, and semiconductor memory control method 有权半导体存储卡，半导体存储器控制装置和半导体存储器控制方法公开(公告)号：US07654466B2
公开(公告)日：2010-02-02
申请号：US10553725
申请日：2004-09-13
申请人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue
发明人： Takuji Maeda , Shinji Inoue , Yoshiho Gotoh , Jun Ohara , Masahiro Nakanishi , Shoichi Tsujita , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Koichi Horiuchi , Manabu Inoue
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0611 , G06F3/0625 , G06F3/0658 , G06F3/0659 , G06F3/0688 , Y02D10/154
摘要： A host information memory is provided in a semiconductor memory card and a data write start address and a data size supplied by an access unit are stored. A free physical area generation section determines whether or not to perform erasing of an invalid block of a nonvolatile memory when writing of data based on the data write start address and data size, and determines the number of blocks to be erased. When erasing, writing of data and erasing of invalid blocks are simultaneously performed with respect to different memory chips. Erase process of data, herewith, can be optimized and high speed access from the access unit to a semiconductor memory card can be realized.
摘要翻译： 在半导体存储卡中提供主机信息存储器，并且存储由访问单元提供的数据写入起始地址和数据大小。 空闲物理区域生成部分基于数据写入开始地址和数据大小来确定在写入数据时是否执行非易失性存储器的无效块的擦除，并且确定要擦除的块的数量。 当擦除时，相对于不同的存储器芯片同时执行数据的写入和无效块的擦除。 可以优化数据的擦除处理，并且可以实现从存取单元到半导体存储卡的高速访问。
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公开(公告)号：US20080288710A1
公开(公告)日：2008-11-20
申请号：US10586658
申请日：2005-01-24
申请人： Takuji Maeda , Shinji Inoue , Shoichi Tsujita , Yoshiho Gotoh , Jun Ohara , Kiminori Matsuno , Kazuaki Tamura
发明人： Takuji Maeda , Shinji Inoue , Shoichi Tsujita , Yoshiho Gotoh , Jun Ohara , Kiminori Matsuno , Kazuaki Tamura
IPC分类号： G06F12/00
CPC分类号： G06F3/08 , G06F3/0613 , G06F3/0632 , G06F3/0643 , G06F3/0679 , G06F12/0246 , G06F16/1847
摘要： A card information storage part (119) is provided in a semiconductor memory device (110) to store information of the characteristics of the semiconductor memory device (110). There is also provided a file system interface control part (120) for performing, based on the stored characteristic information, a file access suitable for the characteristics of the semiconductor memory device (110). This allows an access device (100) to perform an optimum file access via the file system interface control part (120) without awareness of the characteristics of the semiconductor memory device (110).
摘要翻译： 卡信息存储部件（119）设置在半导体存储器件（110）中以存储半导体存储器件（110）的特性的信息。 还提供了一种文件系统接口控制部分（120），用于基于存储的特性信息执行适合于半导体存储器件（110）的特性的文件访问。 这允许访问设备（100）经由文件系统接口控制部分（120）执行最佳文件访问，而不会意识到半导体存储器件（110）的特性。
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6.发明授权Nonvolatile memory system, nonvolatile memory device, memory controller, access device, and method for controlling nonvolatile memory device 有权非易失性存储器系统，非易失性存储器件，存储器控制器，存取器件以及用于控制非易失性存储器件的方法公开(公告)号：US07475185B2
公开(公告)日：2009-01-06
申请号：US11280810
申请日：2005-11-17
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： When a file system control part 155A writes file data into a main memory 142, a file can be easily written continuously and the number of file copy can be decreased at updating a directory entry by writing the file data and a directory entry into different allocation units. In this manner, when using a nonvolatile memory in which physical block size as an erase unit is larger than cluster size, the write performance can be enhanced.
摘要翻译： 当文件系统控制部分155A将文件数据写入主存储器142时，可以容易地连续地写入文件，并且可以通过将文件数据和目录条目写入不同的分配单元来更新目录条目来减少文件拷贝的数量 。 以这种方式，当使用物理块大小作为擦除单位的非易失性存储器大于簇大小时，可以提高写入性能。
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7.发明申请Nonvolatile memory system, nonvolatile memory device, memory controller, access device, and method for controlling nonvolatile memory device 有权非易失性存储器系统，非易失性存储器件，存储器控制器，存取器件以及用于控制非易失性存储器件的方法公开(公告)号：US20060129749A1
公开(公告)日：2006-06-15
申请号：US11280810
申请日：2005-11-17
申请人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
发明人： Masahiro Nakanishi , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno , Shouichi Tsujita , Takuji Maeda , Shinji Inoue , Manabu Inoue , Masayuki Toyama , Keisuke Sakai
IPC分类号： G06F12/00
CPC分类号： G06F3/0643 , G06F3/0613 , G06F3/0679
摘要： When a file system control part 155A writes file data into a main memory 142, a file can be easily written continuously and the number of file copy can be decreased at updating a directory entry by writing the file data and a directory entry into different allocation units. In this manner, when using a nonvolatile memory in which physical block size as an erase unit is larger than cluster size, the write performance can be enhanced.
摘要翻译： 当文件系统控制部分155A将文件数据写入主存储器142时，可以容易地连续地写入文件，并且可以通过将文件数据和目录条目写入不同的分配来更新目录条目来减少文件拷贝的数量 单位。 以这种方式，当使用物理块大小作为擦除单位的非易失性存储器大于簇大小时，可以提高写入性能。
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8.发明授权Semiconductor memory device including memory controller for transmitting writing rate information to memory access device 有权半导体存储器件包括用于将写入速率信息发送到存储器存取器件的存储器控制器公开(公告)号：US07360012B2
公开(公告)日：2008-04-15
申请号：US11048046
申请日：2005-02-02
申请人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
发明人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
CPC分类号： G06F12/0246 , G11C2029/0409
摘要： A semiconductor memory card 1 includes a user data area 21 and a management information area 22, in a data storing unit 2. According to a writing test command from a memory access device 6, a memory controller 3 writes data into a user data storing area and measures the writing rate, and transmits the measurement result to the memory access device 6 via a host interface unit 4. Thereby, the memory access device 6 can recognize the writing rate.
摘要翻译： 在数据存储单元2中，半导体存储卡1包括用户数据区21和管理信息区22。 根据来自存储器访问装置6的写入测试命令，存储器控制器3将数据写入用户数据存储区域并测量写入速率，并且经由主机接口单元4将测量结果发送到存储器访问设备6。 由此，存储器访问装置6能够识别写入速度。
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9.发明申请公开(公告)号：US20050235098A1
公开(公告)日：2005-10-20
申请号：US11048046
申请日：2005-02-02
申请人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
发明人： Kazuaki Tamura , Tomoaki Izumi , Tetsushi Kasahara , Masahiro Nakanishi , Kiminori Matsuno , Takuji Maeda
CPC分类号： G06F12/0246 , G11C2029/0409
摘要： A semiconductor memory card 1 includes a user data area 21 and a management information area 22, in a data storing unit 2. According to a writing test command from a memory access device 6, a memory controller 3 writes data into a user data storing area and measures the writing rate, and transmits the measurement result to the memory access device 6 via a host interface unit 4. Thereby, the memory access device 6 can recognize the writing rate.
摘要翻译： 在数据存储单元2中，半导体存储卡1包括用户数据区21和管理信息区22。 根据来自存储器访问装置6的写入测试命令，存储器控制器3将数据写入用户数据存储区域并测量写入速率，并且经由主机接口单元4将测量结果发送到存储器访问设备6。 由此，存储器访问装置6能够识别写入速度。
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10.发明授权Memory controller, nonvolatile storage device, nonvolatile storage system, and memory control method 有权内存控制器，非易失性存储设备，非易失性存储系统和存储器控制方法公开(公告)号：US08051270B2
公开(公告)日：2011-11-01
申请号：US11914989
申请日：2006-05-18
申请人： Daisuke Kunimune , Masahiro Nakanishi , Manabu Inoue , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno
发明人： Daisuke Kunimune , Masahiro Nakanishi , Manabu Inoue , Tomoaki Izumi , Tetsushi Kasahara , Kazuaki Tamura , Kiminori Matsuno
IPC分类号： G06F12/06
CPC分类号： G06F12/0246 , G06F2212/7201
摘要： A memory controller for reducing a time to create an address management table during initialization of a memory card. The memory controller includes a read-write memory for temporarily storing the address management table and a second memory controller for writing, in a nonvolatile memory, an address management table temporarily stored in the read-write memory. The second memory controller also writes address range specifying information that specifies an address range, when a data writing destination is changed from a first address range to a second address range. The memory controller includes an address management table generator for reading distributed management information used for managing a state of at least one physical block included in the destination address range specified by the address range specifying information during initialization, and to generate the address management table based on the distributed management information.
摘要翻译： 一种用于在存储卡初始化期间减少创建地址管理表的时间的存储器控制器。 存储器控制器包括用于临时存储地址管理表的读写存储器和用于在非易失性存储器中写入临时存储在读写存储器中的地址管理表的第二存储器控制器。 当数据写入目的地从第一地址范围改变到第二地址范围时，第二存储器控制器还写入指定地址范围的地址范围指定信息。 存储器控制器包括地址管理表发生器，用于读取用于管理初始化期间由地址范围指定信息指定的目的地地址范围中包括的至少一个物理块的状态的分布式管理信息，并且基于 分布式管理信息。
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