公开(公告)号：US07282770B2

公开(公告)日：2007-10-16

申请号：US11180786

申请日：2005-07-14

申请人： Takuji Tanaka ,  Hiroshi Nomura ,  Yasunori Iriyama

发明人： Takuji Tanaka ,  Hiroshi Nomura ,  Yasunori Iriyama

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L27/0928 ,  H01L21/823878 ,  H01L21/823892

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type formed in the semiconductor substrate, a transistor formed in the well, a diffusion region of a second conductivity type formed in the semiconductor substrate so as to cover a lateral side and a bottom edge of the well, a terminal formed on the semiconductor substrate at an outside part of the diffusion region, and a conductive region contacting with the well, the well being in ohmic contact with the terminal via the conductive region and the semiconductor substrate, the conductive region having an impurity concentration level exceeding an impurity concentration level of the semiconductor substrate.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底中的第一导电类型的阱，形成在阱中的晶体管，形成在半导体衬底中的第二导电类型的扩散区域，以覆盖 阱的横向侧和底部边缘，在扩散区域的外部形成在半导体衬底上的端子和与阱接触的导电区域，阱经由导电区域与端子欧姆接触，以及 所述半导体衬底，所述导电区域的杂质浓度水平超过所述半导体衬底的杂质浓度水平。

公开(公告)号：US20060220139A1

公开(公告)日：2006-10-05

申请号：US11180786

申请日：2005-07-14

申请人： Takuji Tanaka ,  Hiroshi Nomura ,  Yasunori Iriyama

发明人： Takuji Tanaka ,  Hiroshi Nomura ,  Yasunori Iriyama

IPC分类号： H01L29/06

CPC分类号： H01L27/0928 ,  H01L21/823878 ,  H01L21/823892

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a well of the first conductivity type formed in the semiconductor substrate, a transistor formed in the well, a diffusion region of a second conductivity type formed in the semiconductor substrate so as to cover a lateral side and a bottom edge of the well, a terminal formed on the semiconductor substrate at an outside part of the diffusion region, and a conductive region contacting with the well, the well being in ohmic contact with the terminal via the conductive region and the semiconductor substrate, the conductive region having an impurity concentration level exceeding an impurity concentration level of the semiconductor substrate.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底中的第一导电类型的阱，形成在阱中的晶体管，形成在半导体衬底中的第二导电类型的扩散区域，以覆盖 阱的横向侧和底部边缘，在扩散区域的外部形成在半导体衬底上的端子和与阱接触的导电区域，阱经由导电区域与端子欧姆接触，以及 所述半导体衬底，所述导电区域的杂质浓度水平超过所述半导体衬底的杂质浓度水平。

公开(公告)号：US20060202301A1

公开(公告)日：2006-09-14

申请号：US11433671

申请日：2006-05-15

申请人： Hiroyuki Ohta ,  Yasunori Iriyama

发明人： Hiroyuki Ohta ,  Yasunori Iriyama

IPC分类号： H01L29/00

CPC分类号： H01L21/823481 ,  H01L21/76224

摘要： A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the isolation trench having a trapezoidal cross sectional shape having a width gradually narrowing with a depth from the surface of the silicon substrate; a first liner insulating film formed on the surface of the trench and made of a silicon oxide film or a silicon oxynitride film having a thickness of 1 to 5 nm; a second liner insulating film formed on the first liner insulating film and made of a silicon nitride film having a thickness of 2 to 8 nm; and an isolation region burying the trench defined by the second liner insulating film.

公开(公告)号：US06784472B2

公开(公告)日：2004-08-31

申请号：US10219281

申请日：2002-08-16

申请人： Yasunori Iriyama ,  Tetsuo Izawa

发明人： Yasunori Iriyama ,  Tetsuo Izawa

IPC分类号： H01L2976

CPC分类号： H01L21/76895 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/66545

摘要： A semiconductor device comprises a first transistor 38a having a first gate electrode 22; a second transistor 38b having a second gate electrode 34 which is different from the first gate electrode; an insulation film 28 formed between the first gate electrode and the second gate electrode; and an interconnection electrode 44 buried in a concavity 42 formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

公开(公告)号：US4944870A

公开(公告)日：1990-07-31

申请号：US313342

申请日：1989-02-21

申请人： Aisaburo Yagishita ,  Yasunori Iriyama ,  Jouichiro Osuga

发明人： Aisaburo Yagishita ,  Yasunori Iriyama ,  Jouichiro Osuga

IPC分类号： B01D29/09

CPC分类号： B01D29/09

摘要： An automatic filtration dewatering system includes a cover to which a filtration raw liquid supply pipe and a pressure air supply pipe are connected. A plate having a filter medium support and a filtrate exhaust pipe is selectively closed by a cover with a pneumatic cylinder vertically moving said cover. Filter medium moving rollers are provided on both sides of the cover and plate, and a sheet-like long filter medium is stretched over said rollers for movement a predetermined distance per one step of filtration. The improvement in the system comprises a control device functioning to: (1) operate the pneumatic cylinder just after receiving a starting signal to close the cover and said plate, (2) supply raw liquid after the closed condition is detected and a predetermined closed time elapses to start filtration, (3) stopping supply of raw liquid at the earlier time either when pressure of said raw liquid in said cover has reached a predetermined value or a predetermined filtration time has elapsed, (4) supplying pressurized air into the cover, (5) stopping supply of pressurized air when air pressure in said cover is lower than a predetermined value after a predetermined filtrate discharging time has elapsed, (6) operating the pneumatic cylinder to separate the cover from the plate, and (7) detecting a separate position of the cover by means of a limit switch to generate a signal for starting movement of the filter medium.

摘要翻译： 自动过滤脱水系统包括连接过滤原液供给管和压力空气供给管的盖。 具有过滤介质支撑件和滤液排出管的板通过具有垂直移动所述盖的气缸的盖选择性地闭合。 过滤介质移动辊设置在盖和板的两侧，并且片状长过滤介质在所述辊上拉伸以每一步过滤移动预定距离。 系统的改进包括一个控制装置，其功能是：（1）在接收到启动信号以关闭盖板和所述板之后立即操作气缸，（2）在检测到关闭状态之后提供原液，并且预定的关闭时间 经过开始过滤，（3）当所述盖中的所述原液的压力达到预定值或预定的过滤时间过去时，停止供应原液，（4）将加压空气供应到盖中， （5）在预定的滤液排出时间过去之后，当所述盖子中的空气压力低于预定值时停止供应加压空气;（6）操作气缸以将盖子从板上分离，以及（7）检测 通过限位开关分开盖子的位置，以产生用于启动过滤介质运动的信号。

公开(公告)号：US07589391B2

公开(公告)日：2009-09-15

申请号：US11433671

申请日：2006-05-15

申请人： Hiroyuki Ohta ,  Yasunori Iriyama

发明人： Hiroyuki Ohta ,  Yasunori Iriyama

IPC分类号： H01L21/762

CPC分类号： H01L21/823481 ,  H01L21/76224

摘要： A semiconductor device includes: a silicon substrate with semiconductor elements; an isolation trench formed in the silicon substrate for isolating active regions in the silicon substrate, the isolation trench having a trapezoidal cross sectional shape having a width gradually narrowing with a depth from the surface of the silicon substrate; a first liner insulating film formed on the surface of the trench and made of a silicon oxide film or a silicon oxynitride film having a thickness of 1 to 5 nm; a second liner insulating film formed on the first liner insulating film and made of a silicon nitride film having a thickness of 2 to 8 nm; and an isolation region burying the trench defined by the second liner insulating film.

摘要翻译： 半导体器件包括：具有半导体元件的硅衬底; 在所述硅衬底中形成的用于隔离所述硅衬底中的有源区的隔离沟槽，所述隔离沟槽具有梯形截面形状，所述梯形横截面形状具有从所述硅衬底的表面的深度逐渐变窄的宽度; 第一衬垫绝缘膜，形成在沟槽的表面上，由厚度为1至5nm的氧化硅膜或氮氧化硅膜制成; 形成在第一衬垫绝缘膜上并由厚度为2至8nm的氮化硅膜制成的第二衬垫绝缘膜; 以及掩埋由第二衬垫绝缘膜限定的沟槽的隔离区域。

公开(公告)号：US06849511B2

公开(公告)日：2005-02-01

申请号：US10819230

申请日：2004-04-07

申请人： Yasunori Iriyama ,  Tetsuo Izawa

发明人： Yasunori Iriyama ,  Tetsuo Izawa

IPC分类号： H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/088 ,  H01L31/113

CPC分类号： H01L21/76895 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/66545

摘要： A semiconductor device comprises a first transistor 38a having a first gate electrode 22; a second transistor 38b having a second gate electrode 34 which is different from the first gate electrode; an insulation film 28 formed between the first gate electrode and the second gate electrode; and an interconnection electrode 44 buried in a concavity 42 formed in the first gate electrode, the second gate electrode and the insulation film and electrically interconnecting the first gate electrode and the second gate electrode. The interconnection electrode is buried in the concavity formed in the first gate electrode, the second gate electrode and the insulation film, and the interconnection electrodes electrically interconnects the first gate electrode and the second gate electrode, whereby the semiconductor device can have high integration and can be reliable.

摘要翻译： 半导体器件包括具有第一栅电极22的第一晶体管38a; 具有与第一栅电极不同的第二栅电极34的第二晶体管38b; 形成在第一栅电极和第二栅电极之间的绝缘膜28; 以及埋设在第一栅电极，第二栅电极和绝缘膜中的凹部42中的互连电极44，并且使第一栅电极和第二栅极电互连。 互连电极被埋在形成在第一栅电极，第二栅电极和绝缘膜中的凹部中，并且互连电极将第一栅电极和第二栅电极电互连，由此半导体器件可以具有高集成度 可靠

公开(公告)号：US4686043A

公开(公告)日：1987-08-11

申请号：US844197

申请日：1986-03-26

申请人： Koichi Yagishita ,  Yasunori Iriyama ,  Mitsumasa Hirose

发明人： Koichi Yagishita ,  Yasunori Iriyama ,  Mitsumasa Hirose

IPC分类号： B01D29/09 ,  B01D29/02

CPC分类号： B01D29/09

摘要： Disclosed herein is a batch type filter system including a cover provided with a supply pipe for supplying raw liquid and air, a plate having a filter medium support on an upper surface thereof and a filtrate exhaust pipe, said cover being vertically separable from said plate, a plurality of filter medium moving rollers provided on both sides of said cover and said plate, and a sheet-like long filter medium stretched over said rollers and adapted to be moved by a predetermined length per one batch of filtration, said filter medium being temporarily fixedly held between the circumferential portion of said cover and the curcumferential portion of said plate. The improvement in the batch type filter system comprises arcuately curved tension bars provided at such positions where a moving direction of the filter medium is changed and on downstream sides of said filter medium moving rollers, so as to apply a larger tensile force to a central portion of said filter medium than to both edge portions thereof.

摘要翻译： 本发明公开了一种间歇型过滤器系统，其包括设有供给原料液和空气的供给管的盖，在其上表面具有过滤介质载体的板和滤液排出管，所述盖与所述板垂直分离， 设置在所述盖和所述板的两侧上的多个过滤介质移动辊和在所述辊上延伸并适于每一批过滤移动预定长度的片状长过滤介质，所述过滤介质暂时 固定地保持在所述盖的圆周部分和所述板的弯曲部分之间。 分批式过滤系统的改进包括设置在过滤介质的移动方向改变的位置和所述过滤介质移动辊的下游侧的弧形弯曲张力杆，以便对中心部分施加较大的张力 的所述过滤介质比其两个边缘部分。