公开(公告)号：US20240162367A1

公开(公告)日：2024-05-16

申请号：US18506163

申请日：2023-11-10

申请人： Technion Research & Development Foundation Limited

发明人： Elad KOREN ,  Debopriya DUTTA ,  Subhrajit MUKHERJEE

IPC分类号： H01L31/113 ,  H01L31/032 ,  H01L31/18

CPC分类号： H01L31/1136 ,  H01L31/032 ,  H01L31/18

摘要： A heterostructure system comprises a two-dimensional ferroelectric material on a dielectric substrate, and a two-dimensional semiconductor material having a first region disposed on the ferroelectric material and a second region disposed on the dielectric substrate, wherein an edge of the ferroelectric material is between the first region and the second region of the semiconductor material.

公开(公告)号：US20230307542A1

公开(公告)日：2023-09-28

申请号：US18196024

申请日：2023-05-11

申请人： Technion Research & Development Foundation Limited

发明人： Elad KOREN ,  Subhrajit MUKHERJEE ,  Debopriya DUTTA

IPC分类号： H01L29/78 ,  H01L29/267 ,  H01L29/04

CPC分类号： H01L29/78391 ,  H01L29/267 ,  H01L29/04

摘要： A monolithic solid state system comprises a ferroelectric crystal and a semiconductor crystal arranged laterally to define a nanolayer having a heterojunction between the two crystals. In some embodiments, the ferroelectric crystal exhibits in-plane polarization.