公开(公告)号：US09759601B2

公开(公告)日：2017-09-12

申请号：US14249388

申请日：2014-04-10

Applicant: Technion Research and Development Foundation LTD.

Inventor： Yael Nemirovsky ,  Tomer Merhav ,  Vitali Savuskan ,  Amikam Nemirovsky

IPC: G01J1/42 ,  G01J1/04

CPC classification number: G01J1/4228 ,  G01J1/0488

Abstract: A device that may include a narrowband filter that is arranged to pass radiation within a main signal waveband in which a muzzle flash is expected to include energy above a first energy threshold; a first single photon avalanche diode (SPAD) arranged to detect photons of the main signal waveband during different points in time and to output first digital detection signals representative of the photons of the main signal waveband; and a signal processor that is arranged to receive the first digital detection signals and to detect, in response to at least the first digital detection signals, the muzzle flash.

公开(公告)号：US11609217B2

公开(公告)日：2023-03-21

申请号：US16948170

申请日：2020-09-04

Applicant: TODOS TECHNOLOGIES LTD. ,  Technion Research and Development Foundation Ltd.

Inventor： Yael Nemirovsky ,  Amikam Nemirovsky ,  Shmuel Melman

IPC: G01N33/00 ,  G01N25/30

Abstract: A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

公开(公告)号：US10768153B2

公开(公告)日：2020-09-08

申请号：US15748723

申请日：2016-08-01

Applicant: TODOS TECHNOLOGIES LTD. ,  Technion Research and Development Foundation Ltd.

Inventor： Yael Nemirovsky ,  Amikam Nemirovsky ,  Shmuel Melman

IPC: G01N33/00 ,  G01N25/30

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.