公开(公告)号：USRE50174E1

公开(公告)日：2024-10-15

申请号：US17710394

申请日：2022-03-31

申请人： Tessera LLC

发明人： Bruce B. Doris ,  Hong He ,  Sivananda K. Kanakasabapathy ,  Gauri Karve ,  Fee Li Lie ,  Derrick Liu ,  Soon-Cheon Seo ,  Stuart A. Sieg

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0649 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/66545

摘要： A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.