公开(公告)号：US06156639A

公开(公告)日：2000-12-05

申请号：US116340

申请日：1998-07-16

申请人： Tetsuhiro Fukao ,  Yoshihiro Kusumi ,  Hiroshi Miyatake ,  Nobuo Fujiwara ,  Shigenori Sakamori ,  Satoshi Iida

发明人： Tetsuhiro Fukao ,  Yoshihiro Kusumi ,  Hiroshi Miyatake ,  Nobuo Fujiwara ,  Shigenori Sakamori ,  Satoshi Iida

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/5226 ,  H01L2924/0002

摘要： Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).

摘要翻译： 提供一种用于制造接触结构的方法，以防止无边界结构的电线在导线和导体之间的接触面积中受到侵蚀。 形成具有线掩埋孔的层间绝缘膜（300），将导体（400）埋入孔内。 然后，在层间绝缘膜（300）上形成覆盖该孔的导线层（500）。 通过使用抗蚀剂（540）作为掩模，将导线层（500）制成为具有无边界结构。 阻挡金属层（510）抑制导体（400）和导线层（500）之间的接触区域的侵蚀。

公开(公告)号：US5468337A

公开(公告)日：1995-11-21

申请号：US43523

申请日：1993-04-06

申请人： Hiroshi Miyatake

发明人： Hiroshi Miyatake

IPC分类号： G03F1/30 ,  G03F1/72 ,  H01L21/027 ,  H01L21/30 ,  B44C1/22

CPC分类号： G03F1/72 ,  G03F1/26

摘要： A method to mend a black defect and a white defect of a phase shift mask pattern so that the mended phase shift mask pattern has an accurately defined pattern. In the vicinity of a black defect and the area around the same, a mending phase shifter is formed into a thickness twice as large as the thickness d of a phase shifter. All light beams through a black defect area are nearly 0 degree out of phase with a non-phase-shifted light beam, thereby the phase shift mask pattern having the black defect becoming a phase shift mask pattern with an accurately defined pattern. In a similar manner, every light beam through a white defect area is nearly 180 degree out of phase with a non-phase-shifted light beam. As a result, a mended phase shift mask pattern has an accurately defined pattern.

摘要翻译： 一种修复相移掩模图案的黑色缺陷和白色缺陷的方法，使得修饰的相移掩模图案具有精确限定的图案。 在黑色缺陷附近及其周围的区域，修整移相器形成为移相器的厚度d的两倍的厚度。 通过黑色缺陷区域的所有光束与非相移光束几乎相差0度，从而具有黑色缺陷的相移掩模图案变为具有精确限定图案的相移掩模图案。 以类似的方式，通过白色缺陷区域的每个光束与非相移光束几乎相差180度。 结果，修正的相移掩模图案具有精确定义的图案。

公开(公告)号：US4931897A

公开(公告)日：1990-06-05

申请号：US390012

申请日：1989-08-07

申请人： Katsuhiro Tsukamoto ,  Masahiro Shimizu ,  Hiroshi Miyatake

发明人： Katsuhiro Tsukamoto ,  Masahiro Shimizu ,  Hiroshi Miyatake

IPC分类号： H01L21/02

CPC分类号： H01L28/40 ,  Y10T29/435

摘要： A method of manufacturing a semiconductor capacitor provided with a substrate, a dielectric film formed on the substrate and a pair of electrode layers stacked on both sides of the dielectric film comprises a step of forming a polycrystalline silicon layer for serving as one of the electrode layers on the substrate, a step of making at least a surface region of the polycrystalline silicon layer amorphous, a step of forming the dielectric film on the polycrystalline silicon layer while maintaining an amorphous surface state, and a step of forming another one of the electrode layers on the dielectric film. The lower electrode of the capacitor has its surface or the whole layer made amorphous. The surface of the electrode which is amorphous has smooth surface configuration, thereby improving the quality of the dielectric film formed thereon.

摘要翻译： 一种制造具有基板的半导体电容器的制造方法，在该基板上形成的电介质膜和层叠在该电介质膜的两面的一对电极层，具有形成用作电极层之一的多晶硅层的工序 在所述基板上形成至少使所述多晶硅层的表面区域为非晶体的步骤，在保持非晶质表面状态的同时在所述多晶硅层上形成所述电介质膜的工序，以及形成所述电极层的另一个的工序 在电介质膜上。 电容器的下电极具有其表面或整个层是无定形的。 无定形的电极的表面具有光滑的表面形状，从而提高其上形成的电介质膜的质量。