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公开(公告)号：US07781030B2
公开(公告)日：2010-08-24
申请号：US11710962
申请日：2007-02-27
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta, legal representative , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
CPC分类号： G01J5/20
摘要： An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
摘要翻译： 根据本发明的红外线传感器的制造方法包括在Si基板上形成绝缘材料的桥接结构的步骤，通过干式成膜法在桥式结构体上形成氧化钒薄膜的工序， 将激光照射到氧化钒薄膜上，从而改变其材料特性，将具有改变的材料特性的氧化钒薄膜形成具有预定图案的辐照热电阻器的步骤，以及形成绝缘材料的保护层的步骤 以覆盖具有预定图案和桥结构的测辐射热电阻。
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公开(公告)号：US20070272863A1
公开(公告)日：2007-11-29
申请号：US11710962
申请日：2007-02-27
申请人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
发明人： Tetsuo Tsuchiya , Susumu Mizuta , Yuriko Mizuta , Toshiya Kumagai , Toshihito Sasaki , Seiji Kurashina
CPC分类号： G01J5/20
摘要： An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
摘要翻译： 根据本发明的红外线传感器的制造方法包括在Si基板上形成绝缘材料的桥接结构的步骤，通过干式成膜法在桥式结构体上形成氧化钒薄膜的工序， 将激光照射到氧化钒薄膜上，从而改变其材料特性，将具有改变的材料特性的氧化钒薄膜形成具有预定图案的辐照热电阻器的步骤，以及形成绝缘材料的保护层的步骤 以覆盖具有预定图案和桥结构的测辐射热电阻。
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