公开(公告)号：US20190305074A1

公开(公告)日：2019-10-03

申请号：US15940058

申请日：2018-03-29

Applicant: Texas Instruments Incorporated

Inventor： Dhishan Kande ,  Ye Shao ,  David Curran

IPC: H01L49/02 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/311 ,  H01L27/06 ,  H01L23/522 ,  H01L21/033

Abstract: An integrated circuit (IC) includes a substrate with a semiconductor surface layer including functional circuitry having a plurality of interconnected transistors including a dielectric layer thereon with a metal stack including a plurality of metal levels over the dielectric layer. A thin film resistor (TFR) layer including at least one metal is within the metal stack. At least one capacitor is within the metal stack including a capacitor dielectric layer over a metal bottom plate formed from one of the metal levels. The capacitor top plate is formed from the TFR layer on the capacitor dielectric layer and there is at least one resistor lateral to the capacitor formed from the same TFR layer.