公开(公告)号：US20240213333A1

公开(公告)日：2024-06-27

申请号：US18145625

申请日：2022-12-22

Applicant: Texas Instruments Incorporated

Inventor： Fuchao Wang ,  Bill Wofford ,  Jonathan R Garrett ,  Ebenezer Eshun ,  Jungwoo Joh

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/495 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/408 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31053 ,  H01L23/4952 ,  H01L23/49562 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

Abstract: A microelectronic device includes a III-N semiconductor layer having a top surface with at least one topological structure in the III-N semiconductor layer. The topological structure may be an opening in the III-N semiconductor layer or a protrusion of the III-N semiconductor layer. The microelectronic device also includes a liner including silicon nitride on the topological structure, contacting the III-N semiconductor layer. The microelectronic device further includes a fill material including silicon nitride on the topological structure on the liner. A top surface of the fill material is planar and parallel to the top surface of the III-N semiconductor layer adjacent to the topological structure.