公开(公告)号：US20210305050A1

公开(公告)日：2021-09-30

申请号：US16829862

申请日：2020-03-25

Applicant: Texas Instruments Incorporated

Inventor： Damien Thomas Gilmore ,  Jonathan P. Davis ,  Azghar H Khazi-Syed ,  Shariq Arshad ,  Khanh Quang Le ,  Kaneez Eshaher Banu ,  Jonathan Roy Garrett ,  Sarah Elizabeth Bradshaw ,  Eugene Clayton Davis

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L29/40

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

公开(公告)号：US20230420258A1

公开(公告)日：2023-12-28

申请号：US18346977

申请日：2023-07-05

Applicant: Texas Instruments Incorporated

Inventor： Damien Thomas Gilmore ,  Jonathan P. Davis ,  Azghar H Khazi-Syed ,  Shariq Arshad ,  Khanh Quang Le ,  Kaneez Eshaher Banu ,  Jonathan Roy Garrett ,  Sarah Elizabeth Bradshaw ,  Eugene Clayton Davis

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/28035 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4916

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

公开(公告)号：US11742208B2

公开(公告)日：2023-08-29

申请号：US16829862

申请日：2020-03-25

Applicant: Texas Instruments Incorporated

Inventor： Damien Thomas Gilmore ,  Jonathan P. Davis ,  Azghar H Khazi-Syed ,  Shariq Arshad ,  Khanh Quang Le ,  Kaneez Eshaher Banu ,  Jonathan Roy Garrett ,  Sarah Elizabeth Bradshaw ,  Eugene Clayton Davis

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L21/28035 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4916

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.