公开(公告)号：US20170338222A1

公开(公告)日：2017-11-23

申请号：US15672813

申请日：2017-08-09

Applicant: Texas Instruments Incorporated

Inventor： Roger A. Cline ,  Kyle C. Schulmeyer

IPC: H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/0255 ,  H01L27/0262

Abstract: A circuit for protecting against electrostatic discharge events has a semiconductor substrate (200) of first conductivity embedding a first diode in a well (260) of opposite second conductivity, the diode's anode (111) tied to an I/O pin-to-be-protected (101) at a first voltage, and the first diode's cathode (112) connected to the first drain (123) of a first MOS transistor in the substrate. The first MOS transistor's first gate (122) is biased to a second voltage smaller than the first voltage, thereby reducing the first voltage by the amount of the second voltage. In series with the first MOS transistor is a second MOS transistor with its second drain (670) merged with the first source of the first MOS transistor, and its second source (131), together with its second gate (132), tied to ground potential (140).

公开(公告)号：US09768159B2

公开(公告)日：2017-09-19

申请号：US14829898

申请日：2015-08-19

Applicant: Texas Instruments Incorporated

Inventor： Roger A. Cline ,  Kyle C. Schulmeyer

IPC: H01L27/00 ,  H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/0255 ,  H01L27/0262

Abstract: A circuit for protecting against electrostatic discharge events has a semiconductor substrate (200) of first conductivity embedding a first diode in a well (260) of opposite second conductivity, the diode's anode (111) tied to an I/O pin-to-be-protected (101) at a first voltage, and the first diode's cathode (112) connected to the first drain (123) of a first MOS transistor in the substrate. The first MOS transistor's first gate (122) is biased to a second voltage smaller than the first voltage, thereby reducing the first voltage by the amount of the second voltage. In series with the first MOS transistor is a second MOS transistor with its second drain (670) merged with the first source of the first MOS transistor, and its second source (131), together with its second gate (132), tied to ground potential (140).

公开(公告)号：US10177136B2

公开(公告)日：2019-01-08

申请号：US15672813

申请日：2017-08-09

Applicant: Texas Instruments Incorporated

Inventor： Roger A. Cline ,  Kyle C. Schulmeyer

IPC: H01L27/02

Abstract: A circuit for protecting against electrostatic discharge events has a semiconductor substrate (200) of first conductivity embedding a first diode in a well (260) of opposite second conductivity, the diode's anode (111) tied to an I/O pin-to-be-protected (101) at a first voltage, and the first diode's cathode (112) connected to the first drain (123) of a first MOS transistor in the substrate. The first MOS transistor's first gate (122) is biased to a second voltage smaller than the first voltage, thereby reducing the first voltage by the amount of the second voltage. In series with the first MOS transistor is a second MOS transistor with its second drain (670) merged with the first source of the first MOS transistor, and its second source (131), together with its second gate (132), tied to ground potential (140).

公开(公告)号：US20170053905A1

公开(公告)日：2017-02-23

申请号：US14829898

申请日：2015-08-19

Applicant: Texas Instruments Incorporated

Inventor： Roger A. Cline ,  Kyle C. Schulmeyer

IPC: H01L27/02

CPC classification number: H01L27/0266 ,  H01L27/0255 ,  H01L27/0262

Abstract: A circuit for protecting against electrostatic discharge events has a semiconductor substrate (200) of first conductivity embedding a first diode in a well (260) of opposite second conductivity, the diode's anode (111) tied to an I/O pin-to-be-protected (101) at a first voltage, and the first diode's cathode (112) connected to the first drain (123) of a first MOS transistor in the substrate. The first MOS transistor's first gate (122) is biased to a second voltage smaller than the first voltage, thereby reducing the first voltage by the amount of the second voltage. In series with the first MOS transistor is a second MOS transistor with its second drain (670) merged with the first source of the first MOS transistor, and its second source (131), together with its second gate (132), tied to ground potential (140).21

Abstract translation: 21