公开(公告)号：US20190165168A1

公开(公告)日：2019-05-30

申请号：US16264848

申请日：2019-02-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sameer Pendharkar ,  Ming-yeh Chuang

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/40

Abstract: A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.

公开(公告)号：US20180175191A1

公开(公告)日：2018-06-21

申请号：US15830263

申请日：2017-12-04

Applicant: Texas Instruments Incorporated

Inventor： Sameer Pendharkar ,  Ming-yeh Chuang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/66689

Abstract: A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.

公开(公告)号：US09865729B1

公开(公告)日：2018-01-09

申请号：US15385709

申请日：2016-12-20

Applicant: Texas Instruments Incorporated

Inventor： Sameer Pendharkar ,  Ming-yeh Chuang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/66689

Abstract: A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.

公开(公告)号：US10211335B2

公开(公告)日：2019-02-19

申请号：US15830263

申请日：2017-12-04

Applicant: Texas Instruments Incorporated

Inventor： Sameer Pendharkar ,  Ming-yeh Chuang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40 ,  H01L29/10 ,  H01L29/66 ,  H01L29/08

Abstract: A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.

公开(公告)号：US11004971B2

公开(公告)日：2021-05-11

申请号：US16264848

申请日：2019-02-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sameer Pendharkar ,  Ming-yeh Chuang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

Abstract: A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.