MULTI-LEVEL GATE DRIVER
    1.
    发明申请

    公开(公告)号:US20230068627A1

    公开(公告)日:2023-03-02

    申请号:US17894003

    申请日:2022-08-23

    Abstract: In one example, a switched circuit includes first and second transistors. The first transistor has a first gate and a first source/drain path. The second transistor has a second gate and a second source/drain path. The first and second source/drain paths are coupled in series between an input terminal and an output terminal. A first drive circuit has a first drive input and a first drive output. A second drive circuit has a second drive input and a second drive output. The first drive output is coupled to the first gate, and the second drive output is coupled to the second gate. Switching circuitry is coupled between: at least one of first or second power supply circuits; and at least one of the first or second drive circuits.

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