公开(公告)号：US20140374766A1

公开(公告)日：2014-12-25

申请号：US13922352

申请日：2013-06-20

Applicant: Texas Instruments Incorporated

Inventor： Sandeep R. BAHL ,  Matthew SENESKY ,  Naveen TIPIRNENI ,  David I. ANDERSON ,  Sameer PENDHARKAR

IPC: H01L27/06 ,  H01L29/20

CPC classification number: H01L27/0629 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/8611 ,  H01L29/872 ,  H01L2224/48465

Abstract: A semiconductor device includes a bidirectional GaN FET formed on a non-insulating substrate. The semiconductor device further includes a first electrical clamp connected between the substrate and a first source/drain node of the bidirectional GaN FET, and a second electrical clamp connected between the substrate and a second source/drain node of the bidirectional GaN FET. The first clamp and the second clamp are configured to bias the substrate at a lower voltage level of an applied bias to the first source/drain node and an applied bias to the second source/drain node, within an offset voltage of the relevant clamp.

Abstract translation: 半导体器件包括形成在非绝缘衬底上的双向GaN FET。 所述半导体器件还包括连接在所述衬底和所述双向GaN FET的第一源极/漏极节点之间的第一电夹以及连接在所述衬底与所述双向GaN FET的第二源极/漏极节点之间的第二电夹。 第一钳位和第二钳位被配置为在施加的偏压的较低电压电平下将衬底偏置到第一源极/漏极节点，并在相关钳位的偏移电压内将施加的偏压施加到第二源极/漏极节点。