公开(公告)号：US20240355932A1

公开(公告)日：2024-10-24

申请号：US18598184

申请日：2024-03-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO

IPC: H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/12

CPC classification number: H01L29/78693 ,  H01L21/823412 ,  H01L27/06 ,  H01L27/1225

Abstract: A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor, the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

公开(公告)号：US12107090B2

公开(公告)日：2024-10-01

申请号：US18135432

申请日：2023-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L27/12 ,  H01L33/62 ,  H10K59/10

CPC classification number: H01L27/1225 ,  G09G3/3233 ,  G09G3/3275 ,  H01L27/06 ,  H01L27/0629 ,  H01L27/124 ,  H01L27/1255 ,  H01L33/62 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/045 ,  H10K59/10

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

公开(公告)号：US11971638B2

公开(公告)日：2024-04-30

申请号：US17541423

申请日：2021-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki

IPC: G09G3/36 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/34 ,  G11C19/28 ,  H01L27/06 ,  H01L27/12 ,  H01L27/15 ,  H01L29/24 ,  H01L29/786 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/139 ,  H01L21/67 ,  H10K50/842 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K59/35 ,  H10K71/00 ,  H10K102/00

CPC classification number: G02F1/136286 ,  G02F1/13306 ,  G02F1/13452 ,  G02F1/136213 ,  G02F1/1368 ,  G09G3/342 ,  G09G3/3674 ,  G09G3/3677 ,  G09G3/3685 ,  G11C19/28 ,  H01L27/06 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/156 ,  H01L29/247 ,  H01L29/78693 ,  G02F1/133622 ,  G02F1/133753 ,  G02F1/1393 ,  G02F2202/103 ,  G09G3/3655 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2310/024 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0252 ,  G09G2330/021 ,  H01L21/67167 ,  H10K50/8426 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K59/35 ,  H10K59/351 ,  H10K59/352 ,  H10K71/00 ,  H10K2102/3023 ,  H10K2102/3026 ,  H10K2102/3031

Abstract: A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.

公开(公告)号：US11935964B2

公开(公告)日：2024-03-19

申请号：US17278828

申请日：2019-10-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshihiro Komatsu ,  Toshikazu Ohno

IPC: H01L21/00 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L21/823412 ,  H01L27/06 ,  H01L27/1225

Abstract: A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×1019 atoms/cm3 and lower than or equal to 1.0×1021 atoms/cm3; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

公开(公告)号：US11804407B2

公开(公告)日：2023-10-31

申请号：US17518614

申请日：2021-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/7869 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US20180315780A1

公开(公告)日：2018-11-01

申请号：US16026115

申请日：2018-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L33/62 ,  H01L27/06 ,  G09G3/3275 ,  G09G3/3233 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G09G3/3233 ,  G09G3/3275 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/045 ,  H01L27/06 ,  H01L27/0629 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3241 ,  H01L33/62

Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.

公开(公告)号：US20180277437A1

公开(公告)日：2018-09-27

申请号：US15989337

申请日：2018-05-25

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Shoji YAMADA ,  Takashi SHIIGI ,  Yasuyuki HOSHI

IPC: H01L21/8234 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L21/8234 ,  H01L27/06 ,  H01L27/0629 ,  H01L29/06 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611

Abstract: A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base. The main semiconductor element is a vertical MOSFET and the temperature sensing part is a horizontal diode. An anode region of the temperature sensing part and an n+-type source region and a p+-type contact region of the main semiconductor element are connected by wiring by an anode electrode on a front surface of the silicon carbide base. The temperature sensing part, when the main semiconductor element is ON, is forward biased by drift current flowing in the main semiconductor element. The temperature sensing part, for example, is a poly-silicon diode constituted by a p-type poly-silicon layer and an n-type poly-silicon layer arranged on the front surface of the silicon carbide base. With such configuration, a semiconductor device having high reliability may be provided.

公开(公告)号：US20180006121A1

公开(公告)日：2018-01-04

申请号：US15627426

申请日：2017-06-19

Applicant: Adamantite Technologies LLC

Inventor： Eric David Bauswell

IPC: H01L29/16 ,  H01L49/02 ,  C23C14/06 ,  C23C14/22 ,  H01L21/02 ,  H01L27/06 ,  H01L29/167

CPC classification number: H01L29/1602 ,  C23C14/048 ,  C23C14/0611 ,  C23C14/22 ,  H01L21/02527 ,  H01L21/0257 ,  H01L21/02631 ,  H01L21/8206 ,  H01L27/06 ,  H01L27/092 ,  H01L28/22 ,  H01L29/167 ,  H01L29/66045

Abstract: A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

公开(公告)号：US20170373008A1

公开(公告)日：2017-12-28

申请号：US15676360

申请日：2017-08-14

Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION

Inventor： John CONSTANTINO ,  Timwah LUK ,  Ahmad ASHRAFZADEH ,  Robert L. KRAUSE ,  Etan SHACHAM ,  Maria Clemens Ypil QUINONES ,  Janusz BRYZEK ,  Chung-Lin WU

IPC: H01L23/538 ,  H01L49/02 ,  H01L27/06 ,  H01L23/495 ,  H01L23/66

CPC classification number: H01L23/538 ,  H01L23/49531 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49575 ,  H01L23/49589 ,  H01L23/642 ,  H01L23/66 ,  H01L27/06 ,  H01L28/40 ,  H01L2223/6655 ,  H01L2224/0603 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

公开(公告)号：US20170345718A1

公开(公告)日：2017-11-30

申请号：US15599930

申请日：2017-05-19

Applicant: TDK CORPORATION

Inventor： Takao NOGUCHI ,  Yoshihiko YANO

IPC: H01L21/822 ,  H01L27/02 ,  H01L21/70 ,  H01L27/12 ,  H01L27/06

CPC classification number: H01L21/02189 ,  H01H2057/006 ,  H01L21/707 ,  H01L21/822 ,  H01L21/8221 ,  H01L27/0211 ,  H01L27/06 ,  H01L27/0688 ,  H01L27/12 ,  H01L28/55 ,  H01L28/65 ,  H01L29/513 ,  H01L41/0815 ,  H01L41/319

Abstract: A stacked film is a stacked film including an oxide film, and a metal film provided on the oxide film, in which the oxide film includes a ZrO2 film of which a main surface is a (001) plane, the metal film includes a Pt film or a Pd film that has a single orientation and of which a main surface is a (001) plane, and a [100] axis of the ZrO2 film and a [100] axis of the metal film are parallel to an interface between the oxide film and the metal film, and the axes of both are parallel to each other.