公开(公告)号：US20130099277A1

公开(公告)日：2013-04-25

申请号：US13660782

申请日：2012-10-25

Applicant: The Regents of the University of California

Inventor： James S. Speck ,  Evelyn L. Hu ,  Claude C.A. Weisbuch ,  Yong Seok Choi ,  Gregor Koblmuller ,  Michael Iza ,  Christophe Hurni

IPC: H01L33/02 ,  H01L21/306 ,  H01L29/20

CPC classification number: H01L21/30621 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.

Abstract translation: 通过将蚀刻停止层结合到结构中以及受控的高选择性蚀刻工艺，选择性地干蚀刻N面（Al，In，Ga）N异质结构的方法。 具体地说，该方法包括：（1）在器件结构的生长中结合容易形成的兼容的蚀刻停止层，（2）使用激光剥离或类似工艺来将活性层与 原始生长衬底，和（3）在N面（Al，In，Ga）N上实现高于14：1的蚀刻选择性。