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公开(公告)号:US20220239068A1
公开(公告)日:2022-07-28
申请号:US17613659
申请日:2020-05-28
Applicant: The Regents of the University of California
Inventor: Jared Kearns , Daniel A. Cohen , Joonho Back , Nathan Palmquist , Tal Margalith , Steven P. DenBaars , Shuji Nakamura
Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.