公开(公告)号：US20220239068A1

公开(公告)日：2022-07-28

申请号：US17613659

申请日：2020-05-28

Applicant: The Regents of the University of California

Inventor： Jared Kearns ,  Daniel A. Cohen ,  Joonho Back ,  Nathan Palmquist ,  Tal Margalith ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01S5/183 ,  H01S5/34 ,  H01S5/343

Abstract: Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.