-
1.发明申请公开(公告)号：US20200335663A1
公开(公告)日：2020-10-22
申请号：US16075949
申请日：2017-02-06
发明人： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
摘要： A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
-
公开(公告)号：US20220239068A1
公开(公告)日：2022-07-28
申请号：US17613659
申请日：2020-05-28
发明人： Jared Kearns , Daniel A. Cohen , Joonho Back , Nathan Palmquist , Tal Margalith , Steven P. DenBaars , Shuji Nakamura
摘要： Vertical Cavity Surface Emitting Laser (VCSEL) configurations are disclosed. In a first example, the VCSEL includes a III-Nitride active region between a p-type III-Nitride layer and an n-type III-Nitride layer; and a curved minor on or above the p-type III-Nitride layer. The curved mirror can be formed in a III-Nitride layer or a Transparent Oxide (TO) material and enables the formation of a long VCSEL cavity that improves VCSEL lifetime, VCSEL output power, VCSEL power efficiency and VCSEL reliability. In a second example, the VCSEL has an active region with a high indium content. In a third example, the VCSEL is transparent.
-
公开(公告)号：US20220181513A1
公开(公告)日：2022-06-09
申请号：US17539345
申请日：2021-12-01
发明人： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , H01L21/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06
摘要： A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
-
公开(公告)号：US20180374699A1
公开(公告)日：2018-12-27
申请号：US15773864
申请日：2016-11-01
发明人： Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/02 , H01L29/15 , H01L29/20 , H01L29/207 , H01L29/36 , H01L29/885 , H01L31/18 , H01L31/0352 , H01L31/0304 , H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L21/02584 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/15 , H01L29/2003 , H01L29/207 , H01L29/365 , H01L29/88 , H01L29/885 , H01L31/03044 , H01L31/035236 , H01L31/1856 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/32
摘要： A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
-
公开(公告)号：US10685835B2
公开(公告)日：2020-06-16
申请号：US15773864
申请日：2016-11-01
发明人： Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/00 , H01L31/18 , H01L33/00 , H01L21/02 , H01L29/15 , H01L29/20 , H01L29/207 , H01L29/36 , H01L29/885 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/32 , H01L29/88 , H01L33/04
摘要： A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
-
公开(公告)号：US20200056999A1
公开(公告)日：2020-02-20
申请号：US16343907
申请日：2017-10-19
发明人： Javier Read de Alaniz , Craig Hawker , James Hemmer , Yvonne Diaz , Abigail S. Knight , Zachariah A. Page , Tal Margalith
摘要： Embodiments of the present disclosure describe a colorimetric sensor comprising a substrate including an activated furan and configured to undergo a color change upon detecting an amine. Embodiments of the present disclosure describe a method of using a colorimetric sensor comprising applying an activated furan to a substrate, providing the substrate to a medium, and detecting an amine in the medium via change in color of the substrate. Embodiments of the present disclosure further describe a method of detecting an amine comprising contacting furfural with a cyclic acceptor group to form an activated furan for detecting amines, and contacting the activated furan with an amine to produce a colored donor-acceptor Stenhouse adduct.
-
公开(公告)号：US11411137B2
公开(公告)日：2022-08-09
申请号：US16075949
申请日：2017-02-06
发明人： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
摘要： A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
-
公开(公告)号：US20220005980A1
公开(公告)日：2022-01-06
申请号：US17281700
申请日：2019-10-31
IPC分类号： H01L33/44 , H01L33/32 , H01L33/00 , H01L33/02 , H01L21/306
摘要： Micro-scale light emitting diodes (micro-LEDs) with ultra-low leakage current results from a sidewall passivation method for the micro-LEDs using a chemical treatment followed by conformal dielectric deposition, which reduces or eliminates sidewall damage and surface recombination, and the passivated micro-LEDs can achieve higher efficiency than micro-LEDs without sidewall treatments. Moreover, the sidewall profile of micro-LEDs can be altered by varying the conditions of chemical treatment.
-
公开(公告)号：US11217722B2
公开(公告)日：2022-01-04
申请号：US15743023
申请日：2016-07-11
发明人： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/02 , H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06 , H01S5/026 , H01S5/183 , H01S5/343
摘要： A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
-
公开(公告)号：US20190074404A1
公开(公告)日：2019-03-07
申请号：US15743023
申请日：2016-07-11
发明人： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32 , H01L31/147
摘要： A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.019 秒)
