公开(公告)号：US11974500B2

公开(公告)日：2024-04-30

申请号：US15882642

申请日：2018-01-29

Applicant: The Regents of the University of California

Inventor： Thuc-Quyen Nguyen ,  Arnold Bernarte Tamayo ,  Bright Walker ,  Tyler Kent ,  Chunki Kim ,  Mananya Tantiwiwat

IPC: H10K85/60 ,  B82Y10/00 ,  C08G61/12 ,  H10K30/30 ,  H10K85/10 ,  H10K85/20 ,  H10K30/82

CPC classification number: H10K85/6572 ,  B82Y10/00 ,  H10K30/30 ,  H10K85/113 ,  H10K85/1135 ,  H10K85/211 ,  H10K85/215 ,  H10K85/615 ,  H10K85/649 ,  H10K85/655 ,  H10K85/657 ,  C08G61/126 ,  H10K30/82 ,  Y02E10/549

Abstract: Optoelectronic devices, such as photovoltaic devices, comprising a low band gap, solution processable diketopyrrolopyrrole or dithioketopyrrolopyrrole chromophore core or cores are disclosed. Also disclosed are methods of fabricating such optoelectronic devices.

公开(公告)号：US20160056033A1

公开(公告)日：2016-02-25

申请号：US14830131

申请日：2015-08-19

Applicant: The Regents of the University of California ,  GLOBALFOUNDRIES, Inc. ,  Applied Materials, Inc.

Inventor： Kasra Sardashti ,  Tobin Kaufman-Osborn ,  Tyler Kent ,  Andrew Kummel ,  Shariq Siddiqui ,  Bhagawan Sahu ,  Adam Brand ,  Naomi Yoshida

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02301 ,  H01L21/02315 ,  H01L21/306 ,  H01L29/66181 ,  H01L29/94

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III_V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.

Abstract translation: 在栅极氧化物沉积之前对SiGe或Ge表面的表面预处理清洁SiGe或Ge表面以提供氢封端表面或硫钝化（或S-H）表面。 在25-200℃的范围内进行低温下的高介电常数氧化物的原子层沉积（ALD），形成氧化物层。 退火在升高的温度下进行。 在损伤敏感的III_V半导体表面上的氧化物沉积的方法在100-200℃的低温下用氢和TMA（三甲基铝）的循环脉冲进行表面的原位清洗。原子层沉积（ALD ）的高介电常数氧化物形成氧化物层。 退火在升高的温度下进行。 退火可以产生硅封端的界面。

公开(公告)号：US10134585B2

公开(公告)日：2018-11-20

申请号：US14830131

申请日：2015-08-19

Applicant: The Regents of the University of California ,  GLOBALFOUNDRIES, Inc. ,  Applied Materials, Inc.

Inventor： Kasra Sardashti ,  Tobin Kaufman-Osborn ,  Tyler Kent ,  Andrew Kummel ,  Shariq Siddiqui ,  Bhagawan Sahu ,  Adam Brand ,  Naomi Yoshida

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/306 ,  H01L29/94

Abstract: Surface pretreatment of SiGe or Ge surfaces prior to gate oxide deposition cleans the SiGe or Ge surface to provide a hydrogen terminated surface or a sulfur passivated (or S—H) surface. Atomic layer deposition (ALD) of a high-dielectric-constant oxide at a low temperature is conducted in the range of 25-200° C. to form an oxide layer. Annealing is conducted at an elevated temperature. A method for oxide deposition on a damage sensitive III-V semiconductor surface conducts in-situ cleaning of the surface with cyclic pulsing of hydrogen and TMA (trimethyl aluminum) at a low temperature in the range of 100-200° C. Atomic layer deposition (ALD) of a high-dielectric-constant oxide forms an oxide layer. Annealing is conducted at an elevated temperature. The annealing can create a silicon terminated interfaces.