公开(公告)号：US20250047075A1

公开(公告)日：2025-02-06

申请号：US18416740

申请日：2024-01-18

Applicant: The Regents of the University of Michigan

Inventor： Yong-Ho RA ,  Roksana Tonny RASHID ,  Xianhe LIU ,  Zetian MI

IPC: H01S5/34 ,  H01S5/11 ,  H01S5/183 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.

公开(公告)号：US20210119420A1

公开(公告)日：2021-04-22

申请号：US17071832

申请日：2020-10-15

Applicant: The Regents of the University of Michigan

Inventor： Yong-Ho RA ,  Roksana Tonny RASHID ,  Xianhe LIU ,  Zetian MI

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/11 ,  H01S5/183

Abstract: An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.