公开(公告)号：US20200052101A1

公开(公告)日：2020-02-13

申请号：US16534431

申请日：2019-08-07

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  Xiao Mi ,  David Zajac

IPC: H01L29/66 ,  G06N10/00

Abstract: Methods, devices, and systems are described for storing and transferring quantum information. An example device may comprise at least one semiconducting layer, one or more conducting layers configured to define at least two quantum states in the at least one semiconducting layer and confine an electron in or more of the at least two quantum states, and a magnetic field source configured to generate an inhomogeneous magnetic field. The inhomogeneous magnetic field may cause a first coupling of an electric charge state of the electron and a spin state of the electron. The device may comprise a resonator configured to confine a photon. An electric-dipole interaction may cause a second coupling of an electric charge state of the electron to an electric field of the photon.

公开(公告)号：US20210367065A1

公开(公告)日：2021-11-25

申请号：US17389117

申请日：2021-07-29

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  Xiao Mi ,  David Zajac

IPC: H01L29/66

Abstract: Methods, devices, and systems are described for storing and transferring quantum information. An example device may comprise at least one semiconducting layer, one or more conducting layers configured to define at least two quantum states in the at least one semiconducting layer and confine an electron in or more of the at least two quantum states, and a magnetic field source configured to generate an inhomogeneous magnetic field. The inhomogeneous magnetic field may cause a first coupling of an electric charge state of the electron and a spin state of the electron. The device may comprise a resonator configured to confine a photon. An electric-dipole interaction may cause a second coupling of an electric charge state of the electron to an electric field of the photon.

公开(公告)号：US11121239B2

公开(公告)日：2021-09-14

申请号：US16534431

申请日：2019-08-07

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  Xiao Mi ,  David Zajac

IPC: H01L29/66

Abstract: Methods, devices, and systems are described for storing and transferring quantum information. An example device may comprise at least one semiconducting layer, one or more conducting layers configured to define at least two quantum states in the at least one semiconducting layer and confine an electron in or more of the at least two quantum states, and a magnetic field source configured to generate an inhomogeneous magnetic field. The inhomogeneous magnetic field may cause a first coupling of an electric charge state of the electron and a spin state of the electron. The device may comprise a resonator configured to confine a photon. An electric-dipole interaction may cause a second coupling of an electric charge state of the electron to an electric field of the photon.

公开(公告)号：US20200027972A1

公开(公告)日：2020-01-23

申请号：US16222529

申请日：2018-12-17

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  David Zajac ,  Thomas Hazard

IPC: H01L29/66 ,  H01L31/0352 ,  H01L29/423 ,  H01L29/76 ,  H01L29/06

Abstract: Scalable quantum dot devices and methods are described. An example quantum dot device may comprise one or more repeated cells of a repeating quantum dot structure. The repeated cells may be arranged as a linear array of quantum dots. A single repeated cell may comprise a plurality of quantum dots. The repeated cells may be configured to cause movement of a single electron between adjacent quantum dots. A repeated cell may also comprise a charge sensor for readout of the plurality of quantum dots.

公开(公告)号：US11610984B2

公开(公告)日：2023-03-21

申请号：US17389117

申请日：2021-07-29

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  Xiao Mi ,  David Zajac

IPC: H01L29/66 ,  H01L29/165 ,  H01L29/423 ,  H01L29/76

Abstract: Methods, devices, and systems are described for storing and transferring quantum information. An example device may comprise at least one semiconducting layer, one or more conducting layers configured to define at least two quantum states in the at least one semiconducting layer and confine an electron in or more of the at least two quantum states, and a magnetic field source configured to generate an inhomogeneous magnetic field. The inhomogeneous magnetic field may cause a first coupling of an electric charge state of the electron and a spin state of the electron. The device may comprise a resonator configured to confine a photon. An electric-dipole interaction may cause a second coupling of an electric charge state of the electron to an electric field of the photon.

公开(公告)号：US10978578B2

公开(公告)日：2021-04-13

申请号：US16222529

申请日：2018-12-17

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  David Zajac ,  Thomas Hazard

IPC: H01L29/66 ,  H01L31/0352 ,  H01L29/423 ,  H01L29/76 ,  H01L29/06 ,  H01L29/165 ,  H01L29/778

Abstract: Scalable quantum dot devices and methods are described. An example quantum dot device may comprise one or more repeated cells of a repeating quantum dot structure. The repeated cells may be arranged as a linear array of quantum dots. A single repeated cell may comprise a plurality of quantum dots. The repeated cells may be configured to cause movement of a single electron between adjacent quantum dots. A repeated cell may also comprise a charge sensor for readout of the plurality of quantum dots.

公开(公告)号：US10192976B2

公开(公告)日：2019-01-29

申请号：US15208227

申请日：2016-07-12

Applicant: The Trustees of Princeton University

Inventor： Jason Petta ,  David Zajac ,  Thomas Hazard

IPC: H01L29/66 ,  H01L29/778 ,  H01L31/0352 ,  H01L29/423 ,  H01L29/76 ,  H01L29/06 ,  H01L29/165

Abstract: An exemplary quantum dot device can be provided, which can include, for example, at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another. For example, one of the conductive layers can be composed of a different material than the other two of the conductive layers. The conductive layers can be composed of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon, and/or the at least three conductive layers can be composed at least partially of (i) aluminum, (ii) gold, (iii) copper or (iv) polysilicon. The insulating layers can be composed of (i) silicon oxide, (ii) silicon nitride and/or (iii) aluminum oxide.