公开(公告)号：US10121962B1

公开(公告)日：2018-11-06

申请号：US15589626

申请日：2017-05-08

Applicant: The University of Texas System Board of Regents

Inventor： Leonard Franklin Register, II ,  Bahniman Ghosh ,  Rik Dey ,  Sanjay Kumar Banerjee

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L43/10 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic solid state device is disclosed. The magnetic solid state device includes a substrate and a topological insulator deposited on top of the substrate. The magnetic solid state device also includes a first perpendicular magnetic anisotropy (PMA) bit having a reference PMA layer located on the topological insulator, and a second PMA bit having a free PMA layer located on the topological insulator. A gate contact is utilized to receive various predetermined voltages for controlling the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between the reference PMA layer in the first PMA bit and the free PMA layer in the second PMA bit.