公开(公告)号：US20180209063A1

公开(公告)日：2018-07-26

申请号：US15743879

申请日：2016-07-22

Applicant: The University of Warwick

Inventor： Maksym Myronov ,  Gerard Colston ,  Stephen Rhead

IPC: C30B25/10 ,  C30B29/36 ,  C30B29/06 ,  C23C16/32 ,  C23C16/52

CPC classification number: C30B25/10 ,  C23C16/325 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06 ,  C30B29/36

Abstract: A method of growing epitaxial 3-SiC on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate in a cold-wall chemical vapour deposition reactor, heating the substrate to a temperature equal to or greater than 700° C. and equal to or less than 1200° C., introducing a gas mixture into the reactor while the substrate is at the temperature, the gas mixture comprising a silicon source precursor, a carbon source precursor and a carrier gas so as to deposit an epitaxial layer of 3-SiC on the single-crystal silicon.

公开(公告)号：US10907273B2

公开(公告)日：2021-02-02

申请号：US15743879

申请日：2016-07-22

Applicant: The University of Warwick

Inventor： Maksym Myronov ,  Gerard Colston ,  Stephen Rhead

IPC: C30B25/02 ,  C30B25/10 ,  C23C16/32 ,  C30B29/36 ,  C23C16/52 ,  C30B29/06

Abstract: A method of growing epitaxial 3C-SiC on single-crystal silicon is disclosed. The method comprises providing a single-crystal silicon substrate in a cold-wall chemical vapour deposition reactor, heating the substrate to a temperature equal to or greater than 700° C. and equal to or less than 1200° C., introducing a gas mixture into the reactor while the substrate is at the temperature, the gas mixture comprising a silicon source precursor, a carbon source precursor and a carrier gas so as to deposit an epitaxial layer of 3C-SiC on the single-crystal silicon.