公开(公告)号：US20170200608A1

公开(公告)日：2017-07-13

申请号：US15470313

申请日：2017-03-27

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo GUO ,  Fabio ZÜRCHER ,  Arvind KAMATH ,  Joerg ROCKENBERGER

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/167 ,  C09D11/52

CPC classification number: H01L21/02667 ,  C08G77/56 ,  C08K5/55 ,  C08K2201/001 ,  C09D11/52 ,  C09D183/16 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/208 ,  H01L27/1292 ,  H01L29/167 ,  H01L29/66757

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.