公开(公告)号：US07648914B2

公开(公告)日：2010-01-19

申请号：US11367004

申请日：2006-03-02

申请人： Thomas J. Kropewnicki ,  Theodoros Panagopoulos ,  Nicolas Gani ,  Wilfred Pau ,  Meihua Shen ,  John P. Holland

发明人： Thomas J. Kropewnicki ,  Theodoros Panagopoulos ,  Nicolas Gani ,  Wilfred Pau ,  Meihua Shen ,  John P. Holland

IPC分类号： H01L21/302

CPC分类号： H01L21/32137 ,  H01L22/20

摘要： Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.

摘要翻译： 本发明的实施例通常提供蚀刻衬底的方法。 在一个实施例中，该方法包括确定对应于衬底上的蚀刻副产物的均匀沉积速率的衬底温度目标分布，优选地调节衬底支撑件的第一部分相对于衬底支撑件的第二部分的温度 以获得衬底上的衬底温度目标曲线，并且在优先调节的衬底支撑件上蚀刻衬底。 在另一个实施例中，该方法包括在处理室中提供衬底，该处理室具有在处理室内的物质的可选择分布以及具有侧向温度控制的衬底支撑件，其中由衬底支撑件引导的温度曲线和物种分布的选择包括 控制参数集，蚀刻第一层材料并使用不同的控制参数集分别蚀刻第二层材料。

公开(公告)号：US20070042603A1

公开(公告)日：2007-02-22

申请号：US11367004

申请日：2006-03-02

申请人： Thomas Kropewnicki ,  Theodoros Panagopoulos ,  Nicolas Gani ,  Wilfred Pau ,  Meihua Shen ,  John Holland

发明人： Thomas Kropewnicki ,  Theodoros Panagopoulos ,  Nicolas Gani ,  Wilfred Pau ,  Meihua Shen ,  John Holland

IPC分类号： G01L21/30 ,  H01L21/302

CPC分类号： H01L21/32137 ,  H01L22/20

摘要： Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.

摘要翻译： 本发明的实施例通常提供蚀刻衬底的方法。 在一个实施例中，该方法包括确定对应于衬底上的蚀刻副产物的均匀沉积速率的衬底温度目标分布，优选地调节衬底支撑件的第一部分相对于衬底支撑件的第二部分的温度 以获得衬底上的衬底温度目标曲线，并且在优先调节的衬底支撑件上蚀刻衬底。 在另一个实施例中，该方法包括在处理室中提供衬底，该处理室具有在处理室内的物质的可选择分布以及具有侧向温度控制的衬底支撑件，其中由衬底支撑件引导的温度曲线和物种分布的选择包括 控制参数集，蚀刻第一层材料并使用不同的控制参数集分别蚀刻第二层材料。

公开(公告)号：US20070161255A1

公开(公告)日：2007-07-12

申请号：US11620271

申请日：2007-01-05

申请人： Wilfred Pau ,  Meihua Shen

发明人： Wilfred Pau ,  Meihua Shen

IPC分类号： H01L21/31

CPC分类号： H01L21/32139 ,  H01L21/0338 ,  H01L21/31138

摘要： Methods are provided for processing a substrate by depositing a hardmask material on a surface of the substrate, depositing an anti-reflective coating on the hardmask material, depositing a resist material on the anti-reflective coating, patterning the resist material to form a first resist features having a first width to expose the anti-reflective coating, etching the anti-reflective coating and a first portion of the hardmask material, and trimming the resist material to form a second resist feature having a second width less than the first width.

摘要翻译： 提供了用于通过在基材的表面上沉积硬掩模材料来处理基材的方法，在硬掩模材料上沉积抗反射涂层，在抗反射涂层上沉积抗蚀剂材料，图案化抗蚀剂材料以形成第一抗蚀剂 特征具有第一宽度以暴露抗反射涂层，蚀刻抗反射涂层和硬掩模材料的第一部分，以及修剪抗蚀剂材料以形成具有小于第一宽度的第二宽度的第二抗蚀剂特征。

公开(公告)号：US06635573B2

公开(公告)日：2003-10-21

申请号：US10040109

申请日：2001-10-29

申请人： Wilfred Pau ,  Meihua Shen ,  Jeffrey D. Chinn

发明人： Wilfred Pau ,  Meihua Shen ,  Jeffrey D. Chinn

IPC分类号： H01L21302

CPC分类号： H01L22/26 ,  H01L21/32137

摘要： We have discovered a method of detecting the approach of an endpoint during the etching of a material within a recess such as a trench or a contact via. The method provides a clear and distinct inflection endpoint signal, even for areas of a substrate containing isolated features. The method includes etching the material in the recess and using thin film interferometric endpoint detection to detect an endpoint of the etch process, where the interferometric incident light beam wavelength is tailored to the material being etched; the spot size of the substrate illuminated by the light beam is sufficient to provide adequate signal intensity from the material being etched; and the refractive index of the material being etched is sufficiently different from the refractive index of other materials contributing to reflected light from the substrate, that the combination of the light beam wavelength, the spot size, and the difference in refractive index provides a clear and distinct endpoint signal.

摘要翻译： 我们已经发现了在凹槽（例如沟槽或接触通孔）内蚀刻材料期间检测端点的接近方法。 该方法提供清晰和明确的拐点端点信号，即使对于包含隔离特征的基板的区域也是如此。 该方法包括蚀刻凹陷中的材料并使用薄膜干涉测量端点检测来检测蚀刻过程的终点，其中干涉入射光束波长适合被蚀刻的材料; 由光束照射的基板的光斑尺寸足以从被蚀刻的材料提供足够的信号强度; 并且被蚀刻的材料的折射率与其他有助于来自衬底的反射光的材料的折射率充分不同，光束波长，光点尺寸和折射率差的组合提供了清晰和 不同的端点信号。