公开(公告)号：US6073366A

公开(公告)日：2000-06-13

申请号：US110544

申请日：1998-07-06

申请人： Thomas W. Aswad

发明人： Thomas W. Aswad

IPC分类号： H01L21/205 ,  H01L21/00 ,  H01L21/324 ,  H01L21/677 ,  H01L21/683 ,  F26B3/08

CPC分类号： H01L21/67196 ,  H01L21/67109 ,  H01L21/67766 ,  H01L21/6838 ,  Y10S414/135

摘要： A method and apparatus is disclosed for cooling a substrate between high temperature thermal processing steps. In the disclosed embodiment, one or more cooling stations are located off-line within a wafer handling chamber, just outside the thermal processing chamber. After thermal processing, a hot wafer can be loaded on to the cooling station, where the wafer is subjected to forced convection cooling. In particular, the wafer is subjected to cooling gas from above and below through perforated upper and lower shower head assemblies. The wafer can thus be cooled rapidly on a cooling station while other wafers are transferred into and out of the processing chamber. Desirably, the wafer is cooled on the cooling station to a point at which it can be handled by a low temperature wafer handler and stored in a low temperature cassette.

摘要翻译： 公开了用于在高温热处理步骤之间冷却衬底的方法和装置。 在所公开的实施例中，一个或多个冷却站在刚刚在热处理室外部的晶片处理室内离线设置。 在热处理之后，可以将热晶片装载到冷却台上，在那里晶片经受强制对流冷却。 特别地，通过穿孔的上部和下部淋浴喷头组件从上方和下方对晶片进行冷却。 因此，可以在冷却站上快速冷却晶片，而将其它晶片转移到处理室中并从处理室中移出。 理想地，将晶片在冷却站上冷却至可由低温晶片处理器处理并存储在低温盒中的点。

公开(公告)号：US06408537B1

公开(公告)日：2002-06-25

申请号：US09583059

申请日：2000-05-30

申请人： Thomas W. Aswad

发明人： Thomas W. Aswad

IPC分类号： F26B300

CPC分类号： H01L21/67196 ,  H01L21/67109 ,  H01L21/67766 ,  H01L21/6838 ,  Y10S414/135

摘要： A method and apparatus is disclosed for staging or cooling a substrate between high temperature thermal processing steps. In the disclosed embodiment, one or more cooling stations are located off-line within a wafer handling chamber, outside the thermal processing chamber. After thermal processing, a hot wafer can be loaded on to one station, where the wafer is subjected to forced convection cooling. In particular, the wafer is subjected to cooling gas from above and below through perforated upper and lower showerhead assemblies. The wafer can thus be cooled rapidly on a station while other wafers are transferred into and out of the processing chamber, Desirably, the wafer is cooled on the station to a point at which it can be handled by a low temperature wafer handler and stored in a low temperature cassette.

摘要翻译： 公开了用于在高温热处理步骤之间分级或冷却衬底的方法和装置。 在所公开的实施例中，一个或多个冷却站在热处理室外部的晶片处理室内离线设置。 在热处理之后，可以将热晶片加载到一个工位，其中晶片经受强制对流冷却。 特别地，通过穿孔的上部和下部喷头组件从上方和下方对晶片进行冷却。 因此，晶片可以在站上快速冷却，而其他晶片被转入和移出处理室。理想地，将晶片在工作台上冷却到可由低温晶片处理器处理的位置，并存储在 低温盒式磁带。

公开(公告)号：US06578287B2

公开(公告)日：2003-06-17

申请号：US10131999

申请日：2002-04-24

申请人： Thomas W. Aswad

发明人： Thomas W. Aswad

IPC分类号： F26B308

CPC分类号： H01L21/67196 ,  H01L21/67109 ,  H01L21/67766 ,  H01L21/6838 ,  Y10S414/135

摘要： A method and apparatus is disclosed for staging or cooling a substrate between high temperature thermal processing steps. In the disclosed embodiment, one or more cooling stations are located off-line within a wafer handling chamber, outside the thermal processing chamber. After thermal processing, a hot wafer can be loaded on to one station, where the wafer is subjected to forced convection cooling. In particular, the wafer is subjected to cooling gas from above and below through perforated upper and lower showerhead assemblies. The wafer can thus be cooled rapidly on a station while other wafers are transferred into and out of the processing chamber. Desirably, the wafer is cooled on the station to a point at which it can be handled by a low temperature wafer handler and stored in a low temperature cassette.

摘要翻译： 公开了用于在高温热处理步骤之间分级或冷却衬底的方法和装置。 在所公开的实施例中，一个或多个冷却站在热处理室外部的晶片处理室内离线设置。 在热处理之后，可以将热晶片加载到一个工位，其中晶片经受强制对流冷却。 特别地，通过穿孔的上部和下部喷头组件从上方和下方对晶片进行冷却。 因此，晶片可以在站上快速冷却，而其它晶片被转移进出处理室。 理想地，将晶片在工作站上冷却到可由低温晶片处理器处理并存储在低温盒中的点。