公开(公告)号：US08507038B2

公开(公告)日：2013-08-13

申请号：US12794454

申请日：2010-06-04

申请人： Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

发明人： Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

IPC分类号： C23C16/00 ,  H01L21/768

CPC分类号： C23C16/45553 ,  C23C16/18 ,  C23C16/408 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898

摘要： A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula L2Cu(X∩X) in which L are identical or different σ-donor-π acceptor ligands and/or identical or different σ,π-donor-π acceptor ligands and X∩X is a bidentate ligand which is selected from the group consisting of β-diketonates, β-ketoiminates, β-diiminates, amidinates, carboxylates and thiocarboxylates.

摘要翻译： 可以使用一种方法来生产涂覆的基底。 涂层含有铜。 提供铜前体和基底。 铜前体是不含氟的铜（I）络合物。 通过使用前体，通过原子层沉积（ALD）至少在衬底表面的部分区域上沉积含铜层。 任选地，进行还原步骤，其中还原剂作用在在层沉积步骤中获得的基底上。 在各种实施方案中，前体是式L2Cu（X∩X）的络合物，其中L是相同或不同的σ-供体-π受体配体和/或相同或不同的σ，pi-供体-I受体配体和X∩ X是选自β-二酮酸酯，β-酮亚胺酸酯，β-二亚胺酸酯，脒酯，羧酸酯和硫代羧酸酯的二齿配体。

公开(公告)号：US20100301478A1

公开(公告)日：2010-12-02

申请号：US12794454

申请日：2010-06-04

申请人： Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

发明人： Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： C23C16/45553 ,  C23C16/18 ,  C23C16/408 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898

摘要： A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula L2Cu(X∩X) in which L are identical or different σ-donor-π acceptor ligands and/or identical or different σ,π-donor-π acceptor ligands and X∩X is a bidentate ligand which is selected from the group consisting of β-diketonates, β-ketoiminates, β-diiminates, amidinates, carboxylates and thiocarboxylates.

摘要翻译： 可以使用一种方法来生产涂覆的基底。 涂层含有铜。 提供铜前体和基底。 铜前体是不含氟的铜（I）络合物。 通过使用前体，通过原子层沉积（ALD）至少在衬底表面的部分区域上沉积含铜层。 任选地，进行还原步骤，其中还原剂作用在在层沉积步骤中获得的基底上。 在各种实施方案中，前体是式L2Cu（X∩X）的络合物，其中L是相同或不同的，并且被供体 - 受体配体和/或相同或不同的“和” - 供体 - 受体配体和X∩X是二齿配体，其选自＆amp; big-二酮化合物，酮基，β-二亚胺，脒基，羧酸酯和硫代羧酸盐。