公开(公告)号：US20230407466A1

公开(公告)日：2023-12-21

申请号：US18332971

申请日：2023-06-12

Applicant: Tokyo Electron Limited

Inventor： Muneyuki OTANI ,  Akira MATSUBARA

IPC: C23C16/40 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/401 ,  H01L21/02164 ,  H01L21/0228 ,  C23C16/45527 ,  H01L21/68771

Abstract: A deposition method includes: (a) preparing a substrate with a recess on a surface thereof; (b) supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; (c) supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and (d) after the (c), supplying a first gas containing a dehydrating agent to the surface.

公开(公告)号：US20250003070A1

公开(公告)日：2025-01-02

申请号：US18743589

申请日：2024-06-14

Applicant: Tokyo Electron Limited

Inventor： Akira MATSUBARA ,  Fumiaki HAYASE ,  Muneyuki OTANI

IPC: C23C16/455 ,  C23C16/458

Abstract: A substrate-processing apparatus includes a processing container, a raw material gas supply, a reaction gas supply, and a dehydration gas supply. The raw material gas supply is configured to supply an interior of the processing container with a raw material gas. The reaction gas supply is configured to supply the interior of the processing container with a reaction gas that reacts with the raw material gas. The dehydration gas supply is configured to supply the interior of the processing container with dehydration gas to eliminate moisture. The raw material gas is supplied to a substrate that is accommodated inside the processing container, followed by supplying the reaction gas and the dehydration gas to the substrate.