公开(公告)号：US20180245216A1

公开(公告)日：2018-08-30

申请号：US15899672

申请日：2018-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Takayuki KARAKAWA ,  Takeshi OYAMA ,  Masahide IWASAKI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/683 ,  C23C16/34

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6835

Abstract: A film forming apparatus for carrying out a film forming process on a substrate by performing a cycle of sequentially supplying a first processing gas and a second processing gas a plurality of times in a vacuum container, includes: a rotary table having one surface on which a substrate mounting region for mounting a substrate is formed; a first gas supply part including a gas discharge portion having gas discharge holes of a first gas with a uniform hole diameter, an exhaust port surrounding the gas discharge portion, and a purge gas discharge port surrounding the gas discharge portion, which are formed on an opposing surface opposite the rotary table; a second gas supply part configured to supply a second gas to a region spaced apart in a circumferential direction of the rotary table from the first gas supply part; and an evacuation port configured to evacuate the vacuum container.

公开(公告)号：US20150315705A1

公开(公告)日：2015-11-05

申请号：US14694200

申请日：2015-04-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeshi KUMAGAI ,  Muneyuki OTANI ,  Kazuya OKUBO

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50

CPC classification number: C23C16/40 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32899

Abstract: A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.

Abstract translation: 成膜方法包括将含有第一金属元素的第一源气体供应到基板上，将含有第二金属元素的第二源气体供应到基板上，提供转换成等离子体的反应气体，并含有与第一金属反应的非金属元素 元素和第二金属元素分别产生第一反应产物和第二反应产物到基底，以产生含有第一金属元素，第二金属元素和非金属元素的第三反应产物。 第三反应产物中含有的第一金属元素的混合比高于第二金属元素，第二反应产物的结晶温度高于第一反应产物的结晶温度。

公开(公告)号：US20230407466A1

公开(公告)日：2023-12-21

申请号：US18332971

申请日：2023-06-12

Applicant: Tokyo Electron Limited

Inventor： Muneyuki OTANI ,  Akira MATSUBARA

IPC: C23C16/40 ,  H01L21/02 ,  C23C16/455

CPC classification number: C23C16/401 ,  H01L21/02164 ,  H01L21/0228 ,  C23C16/45527 ,  H01L21/68771

Abstract: A deposition method includes: (a) preparing a substrate with a recess on a surface thereof; (b) supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; (c) supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and (d) after the (c), supplying a first gas containing a dehydrating agent to the surface.

公开(公告)号：US20180237914A1

公开(公告)日：2018-08-23

申请号：US15897209

申请日：2018-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Kentaro OSHIMO ,  Hideomi HANE

IPC: C23C16/455 ,  C23C16/513 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/511 ,  C23C16/513 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32724 ,  H01J37/32752 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.

公开(公告)号：US20150322568A1

公开(公告)日：2015-11-12

申请号：US14700593

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Inventor： Takeshi KUMAGAI ,  Muneyuki OTANI

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/458

CPC classification number: C23C16/34 ,  C23C16/06 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/4584

Abstract: A method of depositing a continuous TiN film on a substrate is provided. In the method, a continuous TiO2 film is deposited on a substrate, and then a continuous TiN film is deposited on the continuous TiO2 film. The TiN film is thicker than the TiO2 film.

Abstract translation: 提供了一种在衬底上沉积连续TiN膜的方法。 在该方法中，在基板上沉积连续的TiO 2膜，然后在连续的TiO 2膜上沉积连续的TiN膜。 TiN膜比TiO 2膜厚。

公开(公告)号：US20150184294A1

公开(公告)日：2015-07-02

申请号：US14658295

申请日：2015-03-16

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Kohichi ORITO ,  Hiroyuki KIKUCHI ,  Muneyuki OTANI ,  Takeshi KUMAGAI ,  Kensaku NARUSHIMA ,  Takashi NISHIMORI

IPC: C23C16/458 ,  C23C16/50 ,  C23C16/34 ,  C23C16/44 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45523 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/50 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/76843

Abstract: A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.

Abstract translation: 当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。 在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。

公开(公告)号：US20250003070A1

公开(公告)日：2025-01-02

申请号：US18743589

申请日：2024-06-14

Applicant: Tokyo Electron Limited

Inventor： Akira MATSUBARA ,  Fumiaki HAYASE ,  Muneyuki OTANI

IPC: C23C16/455 ,  C23C16/458

Abstract: A substrate-processing apparatus includes a processing container, a raw material gas supply, a reaction gas supply, and a dehydration gas supply. The raw material gas supply is configured to supply an interior of the processing container with a raw material gas. The reaction gas supply is configured to supply the interior of the processing container with a reaction gas that reacts with the raw material gas. The dehydration gas supply is configured to supply the interior of the processing container with dehydration gas to eliminate moisture. The raw material gas is supplied to a substrate that is accommodated inside the processing container, followed by supplying the reaction gas and the dehydration gas to the substrate.

公开(公告)号：US20220384473A1

公开(公告)日：2022-12-01

申请号：US17331813

申请日：2021-05-27

Applicant: Tokyo Electron Limited

Inventor： Sara OTSUKI ,  Genji NAKAMURA ,  Muneyuki OTANI ,  Kazuya TAKAHASHI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device according to the present disclosure includes forming a stack by alternately stacking insulating films and sacrificial films on a substrate; forming, in the stack, a through-hole extending in a thickness direction of the stack; forming a block insulating film, a charge trapping film, a tunnel insulating film, and a channel film on an inner surface of the through-hole in this order; forming, in the stack, a slit extending in the thickness direction of the stack separately from the through-hole; removing the sacrificial films through the slit so as to form a recess between adjacent insulating films; forming a first metal oxide film on an inner surface of the recess; forming, on the first metal oxide film, a second metal oxide film having a crystallization temperature lower than that of the first metal oxide film; and filling the recess with an electrode layer.