公开(公告)号：US20250079184A1

公开(公告)日：2025-03-06

申请号：US18241773

申请日：2023-09-01

Applicant: Tokyo Electron Limited

Inventor： Jason MARION ,  Alexander KAISER ,  Yusuke YOSHIDA ,  Yun HAN

IPC: H01L21/3213 ,  H01L21/3205 ,  H01L21/321 ,  H01L29/40 ,  H01L29/66

Abstract: A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.