公开(公告)号：US20220092242A1

公开(公告)日：2022-03-24

申请号：US17025651

申请日：2020-09-18

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Megan WOOLEY ,  Toshihiro KITAO ,  Carlos FONSECA

IPC: G06F30/33

Abstract: Aspects of the disclosure provide a method for wafer result prediction. The method includes determining predictor parameters of a semiconductor process using domain knowledge that includes knowledge of the semiconductor process, a processing tool associated with the semiconductor process, a metrology tool, and/or the wafer. The method also includes removing collinearity among the predictor parameters to obtain key predictor parameters, and selecting a subset of the key predictor parameters based on metrology data of the wafer obtained from the metrology tool. The method further includes building a virtual metrology (VM) model on the subset of the key predictor parameters and may include predicting wafer results using the VM model.