VIRTUAL METROLOGY FOR WAFER RESULT PREDICTION

    公开(公告)号:US20220092242A1

    公开(公告)日:2022-03-24

    申请号:US17025651

    申请日:2020-09-18

    Abstract: Aspects of the disclosure provide a method for wafer result prediction. The method includes determining predictor parameters of a semiconductor process using domain knowledge that includes knowledge of the semiconductor process, a processing tool associated with the semiconductor process, a metrology tool, and/or the wafer. The method also includes removing collinearity among the predictor parameters to obtain key predictor parameters, and selecting a subset of the key predictor parameters based on metrology data of the wafer obtained from the metrology tool. The method further includes building a virtual metrology (VM) model on the subset of the key predictor parameters and may include predicting wafer results using the VM model.

    VIRTUAL METROLOGY ENHANCED PLASMA PROCESS OPTIMIZATION METHOD

    公开(公告)号:US20220406580A1

    公开(公告)日:2022-12-22

    申请号:US17350439

    申请日:2021-06-17

    Abstract: A method of optimizing a recipe for a plasma process includes (a) building a virtual metrology (VM) model that predicts a wafer characteristic resulting from the plasma process based on a plasma parameter and (b) building a control model that describes a relationship between the plasma parameter and a recipe parameter. (c) The wafer characteristic is measured after performing the plasma process according to the recipe. (d) Whether the wafer characteristic is within a predetermined range is determined. (e) The VM model and the control model are calibrated based on the wafer characteristic. (f) The recipe is optimized by updating the plasma parameter based on the wafer characteristic using the VM model and updating the recipe parameter based on the plasma parameter using the control model. (c), (d), (e) and (f) are repeated until the wafer characteristic is within the predetermined range.

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