公开(公告)号：US20220092242A1

公开(公告)日：2022-03-24

申请号：US17025651

申请日：2020-09-18

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Megan WOOLEY ,  Toshihiro KITAO ,  Carlos FONSECA

IPC: G06F30/33

Abstract: Aspects of the disclosure provide a method for wafer result prediction. The method includes determining predictor parameters of a semiconductor process using domain knowledge that includes knowledge of the semiconductor process, a processing tool associated with the semiconductor process, a metrology tool, and/or the wafer. The method also includes removing collinearity among the predictor parameters to obtain key predictor parameters, and selecting a subset of the key predictor parameters based on metrology data of the wafer obtained from the metrology tool. The method further includes building a virtual metrology (VM) model on the subset of the key predictor parameters and may include predicting wafer results using the VM model.

公开(公告)号：US20220406580A1

公开(公告)日：2022-12-22

申请号：US17350439

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Toshihiro KITAO ,  Atsushi SUZUKI ,  Megan WOOLEY ,  Alok RANJAN

IPC: H01J37/32 ,  G06F30/398

Abstract: A method of optimizing a recipe for a plasma process includes (a) building a virtual metrology (VM) model that predicts a wafer characteristic resulting from the plasma process based on a plasma parameter and (b) building a control model that describes a relationship between the plasma parameter and a recipe parameter. (c) The wafer characteristic is measured after performing the plasma process according to the recipe. (d) Whether the wafer characteristic is within a predetermined range is determined. (e) The VM model and the control model are calibrated based on the wafer characteristic. (f) The recipe is optimized by updating the plasma parameter based on the wafer characteristic using the VM model and updating the recipe parameter based on the plasma parameter using the control model. (c), (d), (e) and (f) are repeated until the wafer characteristic is within the predetermined range.

公开(公告)号：US20230009419A1

公开(公告)日：2023-01-12

申请号：US17373078

申请日：2021-07-12

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Toshihiro KITAO ,  Hiroshi NAGAHATA ,  Chungjong LEE

IPC: G05B19/418 ,  H05H1/46 ,  H01L21/66

Abstract: A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

公开(公告)号：US20180158652A1

公开(公告)日：2018-06-07

申请号：US15832312

申请日：2017-12-05

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA

IPC: H01J37/32

CPC classification number: H01L21/3065 ,  G01J3/443 ,  G01N21/68 ,  G01N21/73 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: A method and a system for monitoring a plasma chamber are provided. The method includes receiving process chamber characteristics from the plasma chamber; determining whether one or more variables associated with the process chamber characteristics are within predetermined specification. The method further includes updating a status of the plasma chamber to failure when the chamber characteristics are not within the predetermined specification. The method generates a warning notification when the chamber characteristics are within predetermined specification and when an operation status of the plasma chamber received from a fault detection system indicates a failure.

公开(公告)号：US20240420359A1

公开(公告)日：2024-12-19

申请号：US18820492

申请日：2024-08-30

Applicant: Tokyo Electron Limited

Inventor： Toshihiro KITAO ,  Jun SHINAGAWA ,  Masato KAZUI ,  Makoto IGARASHI ,  Toshihiro OHNO

IPC: G06T7/62 ,  G06T7/00 ,  G06T7/50

Abstract: The profile detecting method includes: detecting a specific shape included in a detection target image from the detection target image including the specific shape using a model that has learned a learning image including the specific shape and information regarding the specific shape included in the learning image; and outputting shape information of the detected specific shape.

公开(公告)号：US20230352282A1

公开(公告)日：2023-11-02

申请号：US17730751

申请日：2022-04-27

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Toshihiro KITAO ,  Chungjong LEE ,  Masaki KITSUNEZUKA ,  Alok RANJAN

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32963 ,  H01J37/32926 ,  H01J37/32972 ,  H01L21/31116 ,  H01J2237/334

Abstract: A method of operating a plasma tool includes executing a plasma process on a wafer. Data associated with the plasma process are measured using a plurality of sensors while the plasma process is executed on the wafer. The plasma process is terminated at an endpoint time. A post-process fault detection is executed by determining whether a post-process wafer state is within a target range. When the post-process wafer state is outside the target range so that a fault is detected, the fault is corrected using the data associated with the plasma process.

公开(公告)号：US20230317483A1

公开(公告)日：2023-10-05

申请号：US17710085

申请日：2022-03-31

Applicant: Tokyo Electron Limited

Inventor： Masaki KITSUNEZUKA ,  Chungjong LEE ,  Jun SHINAGAWA

IPC: H01L21/67 ,  G01R31/28 ,  H01J37/32 ,  G05B19/418

CPC classification number: H01L21/67276 ,  G01R31/2831 ,  H01J37/32963 ,  G05B2219/45031 ,  G05B19/41875 ,  G05B19/41865 ,  G05B2219/32368 ,  H01J37/32972

Abstract: Provided is a method for monitoring a plasma-related process in a plasma tool. The method includes measuring data associated with the plasma-related process using a plurality of sensors while executing the plasma-related process on a wafer. Respective data measured by each sensor of the plurality of sensors are input into a respective individual estimation method to output a respective individual wafer state of the wafer, which results in a plurality of individual wafer states. The respective individual estimation method is configured to estimate the respective individual wafer state using at least the respective data. The plurality of individual wafer states is input into an integrated estimation method to output an integrated wafer state of the wafer. The integrated estimation method is configured to estimate the integrated wafer state using at least the plurality of individual wafer states.

公开(公告)号：US20230315047A1

公开(公告)日：2023-10-05

申请号：US17710362

申请日：2022-03-31

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Brian PFEIFER ,  John SOLIS ,  Brian GESSLER ,  Koichiro NAKAMURA ,  Yutaka HIROOKA

IPC: G05B19/4099

CPC classification number: G05B19/4099 ,  G05B2219/45031

Abstract: A method for detecting an endpoint of a seasoning process for a plasma tool includes (a) operating the plasma tool to run a seasoning recipe on at least one seasoning wafer before running a monitoring recipe on at least one monitoring wafer; (b) collecting, while running the monitoring recipe on the monitoring wafer, monitoring data associated with the running the monitoring recipe; and (c) generating an estimated product parameter using a virtual metrology (VM) model that is configured to estimate a product parameter using the monitoring data. The VM model is based on production data associated with running a production recipe on production wafers and product parameters of the production wafers measured after the running the production recipe. The endpoint of the seasoning process is obtained by repeating (a), (b) and (c), and the endpoint is obtained when the estimated product parameter stabilizes.