公开(公告)号：US20240412978A1

公开(公告)日：2024-12-12

申请号：US18718981

申请日：2022-09-29

Applicant: Tokyo Electron Limited

Inventor： Kimihiko DEMICHI ,  Tetsuro TAKAHASHI ,  Changhwan SEOK ,  Jun KOBAYASHI ,  Akihiro SATO

IPC: H01L21/311 ,  H01L21/67

Abstract: A gas treatment method of performing a gas treatment on a substrate having a recess includes: disposing the substrate having the recess in a chamber; adjusting a pressure inside the chamber to a predetermined pressure by supplying a pressure adjustment gas into the chamber in an evacuated state to increase the pressure inside the chamber; and subsequently, performing the gas treatment on a side wall of the recess of the substrate by causing a treatment reaction by a process gas in the chamber, wherein the process gas causing the treatment reaction is used as at least a part of the pressure adjustment gas in the adjusting the pressure.