公开(公告)号：US20130337394A1

公开(公告)日：2013-12-19

申请号：US13917759

申请日：2013-06-14

Applicant: Tokyo Electron Limited

Inventor： Shinji ASARI ,  Hidekazu SATO ,  Hideki TAKAHASHI

IPC: F27D7/06 ,  F27D5/00 ,  F27D11/02 ,  H01L21/67

CPC classification number: F27D7/06 ,  F27B17/0025 ,  F27D5/0037 ,  F27D11/02 ,  H01L21/67098 ,  H01L21/67109

Abstract: According to one aspect of the present disclosure, provided is a heat treatment apparatus configured to heat treat a plurality of objects to be treated which are held and supported by a holding and supporting unit while an inert gas is allowed to flow in a vertical type processing chamber from a bottom to a top thereof, wherein the processing chamber has a heating unit installed therearound. The heat treatment apparatus includes a gas supply system configured to supply the inert gas, wherein the gas supply system includes a gas supply header portion located in a lower end of the processing chamber to allow the inert gas to flow along a circumferential direction of the lower end; and a gas introduction portion in communication with the gas supply header portion to introduce the inert gas into the processing chamber.

Abstract translation: 根据本公开的一个方面，提供了一种热处理装置，其被配置为对待处理的多个物体进行热处理，所述待处理物体由保持和支撑单元保持和支撑，同时惰性气体允许在垂直型加工中流动 从其底部到顶部，其中处理室具有安装在其周围的加热单元。 该热处理装置具备供给惰性气体的气体供给系统，其特征在于，所述气体供给系统包括位于所述处理室的下端的气体供给头部，以使惰性气体沿着下部的周向流动 结束; 以及与气体供给头部连通以将惰性气体引入处理室的气体导入部。

公开(公告)号：US20140373387A1

公开(公告)日：2014-12-25

申请号：US13922450

申请日：2013-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji ASARI ,  Hidekazu SATO ,  Tomohiro SHIOBARA

IPC: H01L21/02

CPC classification number: H01L21/67109

Abstract: A heat treatment apparatus performs a heat treatment on a plurality of target objects held by a holding unit while allowing an inert gas to flow upwardly in a vertical processing container with at least one heating unit provided in the vicinity of the processing container. The heat treatment apparatus includes: a main temperature control unit configured to control the heating unit; an inert gas passage through which the inert gas flows into the processing container; an inert gas heating unit installed in the inert gas passage and configured to heat the inert gas; a first temperature measuring unit installed in the inert gas heating unit; and a temperature controller configured to control the inert gas heating unit based on temperatures measured by the first temperature measuring unit.

Abstract translation: 热处理装置对由保持单元保持的多个目标物体进行热处理，同时允许惰性气体在垂直处理容器中向上流动，其中至少一个加热单元设置在处理容器附近。 热处理装置包括：主温度控制单元，被配置为控制加热单元; 惰性气体通道，惰性气体通过其流入处理容器; 惰性气体加热单元，安装在惰性气体通道中并构造成加热惰性气体; 安装在惰性气体加热单元中的第一温度测量单元; 以及温度控制器，其被配置为基于由所述第一温度测量单元测量的温度来控制所述惰性气体加热单元。

公开(公告)号：US20160027661A1

公开(公告)日：2016-01-28

申请号：US14799623

申请日：2015-07-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hidekazu SATO ,  Hideki TAKAHASHI ,  Tsutomu YAMAMOTO

IPC: H01L21/324 ,  H05B3/00

CPC classification number: H05B3/0047 ,  H01L21/67109 ,  H05B3/44 ,  H05B2203/014 ,  H05B2203/032

Abstract: There is provided a heat treatment apparatus, including: a processing container configured to perform a heat treatment on substrates accommodated in the processing container; a heating unit configured to cover an outer circumference of the processing container with a predetermined space defined the heating unit and the processing container; a discharge pipe installed outside of the processing container and within the predetermined space, and configured to communicate with an interior of the processing container to discharge an exhaust gas from the interior of the processing container; and a heat insulating member configured to cover a circumference of the discharge pipe.

Abstract translation: 提供一种热处理装置，包括：处理容器，被配置为对容纳在处理容器中的基板进行热处理; 加热单元，其构造成以预定空间覆盖处理容器的外周，限定了加热单元和处理容器; 排出管，其设置在所述处理容器的外部并且在所述预定空间内，并且构造成与所述处理容器的内部连通，以从所述处理容器的内部排出废气; 以及构造成覆盖排出管的周边的绝热构件。