公开(公告)号：US20140373387A1

公开(公告)日：2014-12-25

申请号：US13922450

申请日：2013-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji ASARI ,  Hidekazu SATO ,  Tomohiro SHIOBARA

IPC: H01L21/02

CPC classification number: H01L21/67109

Abstract: A heat treatment apparatus performs a heat treatment on a plurality of target objects held by a holding unit while allowing an inert gas to flow upwardly in a vertical processing container with at least one heating unit provided in the vicinity of the processing container. The heat treatment apparatus includes: a main temperature control unit configured to control the heating unit; an inert gas passage through which the inert gas flows into the processing container; an inert gas heating unit installed in the inert gas passage and configured to heat the inert gas; a first temperature measuring unit installed in the inert gas heating unit; and a temperature controller configured to control the inert gas heating unit based on temperatures measured by the first temperature measuring unit.

Abstract translation: 热处理装置对由保持单元保持的多个目标物体进行热处理，同时允许惰性气体在垂直处理容器中向上流动，其中至少一个加热单元设置在处理容器附近。 热处理装置包括：主温度控制单元，被配置为控制加热单元; 惰性气体通道，惰性气体通过其流入处理容器; 惰性气体加热单元，安装在惰性气体通道中并构造成加热惰性气体; 安装在惰性气体加热单元中的第一温度测量单元; 以及温度控制器，其被配置为基于由所述第一温度测量单元测量的温度来控制所述惰性气体加热单元。

公开(公告)号：US20220372624A1

公开(公告)日：2022-11-24

申请号：US17747326

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Yohei MATSUMOTO ,  Naohide ITO ,  Takehiro FUKADA ,  Shinji ASARI

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/458

Abstract: A control apparatus is included in a film forming apparatus that includes: a rotation table disposed in a vacuum container and configured to rotate around a central shaft of a table surface, thereby revolving a substrate on a disposing surface provided on a part of the table surface; a stage configured to rotate around the central shaft of the disposing surface, thereby rotating the substrate on the disposing surface; and a gas supply unit configured to supply a gas into the vacuum container. The control apparatus includes: a display control unit configured to display a setting screen for setting a first parameter that controls a rotation of the substrate; and a process execution unit configured to form a film on the substrate while controlling the rotation of the substrate based on the set first parameter.

公开(公告)号：US20140305540A1

公开(公告)日：2014-10-16

申请号：US14247371

申请日：2014-04-08

Applicant: Tokyo Electron Limited

Inventor： Katsuhiko OYAMA ,  Yasushi TAKEUCHI ,  Shinji ASARI

IPC: H01L21/673

CPC classification number: H01L21/67389 ,  H01L21/67379 ,  H01L21/67769 ,  H01L21/67772

Abstract: A method for managing an atmosphere in a storage container in a processing apparatus including a substrate transfer region and a container transfer region which are partitioned by a partition wall; a load port; a container keeping rack; and a cover opening/closing mechanism, includes substituting the internal atmosphere of the storage container that stores non-processed substrates with the inert gas for using the cover opening/closing mechanism; transferring the storage container of which the internal atmosphere has been substituted with the inert gas, to the container keeping rack and placing and keeping the storage container on the container keeping rack; and putting the storage container on standby on the container keeping rack while maintaining the atmosphere substituted with the inert gas.

Abstract translation: 一种处理装置中的管理气氛的方法，所述处理装置包括由分隔壁分隔的基板传送区域和容器传送区域; 负载端口; 集装箱架; 以及盖开闭机构，其特征在于，在所述盖开闭机构中，使用所述惰性气体代替存储未处理基板的储存容器的内部气氛; 将内部空气已经被惰性气体代替的储存容器传送到容器保持架，并将储存容器放置并保持在容器保持架上; 并将储存容器置于容器保持架上，同时保持用惰性气体取代的气氛。

公开(公告)号：US20220230852A1

公开(公告)日：2022-07-21

申请号：US17648436

申请日：2022-01-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Hiroyuki KIKUCHI ,  Shinji ASARI ,  Yuji SAWADA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

公开(公告)号：US20130337394A1

公开(公告)日：2013-12-19

申请号：US13917759

申请日：2013-06-14

Applicant: Tokyo Electron Limited

Inventor： Shinji ASARI ,  Hidekazu SATO ,  Hideki TAKAHASHI

IPC: F27D7/06 ,  F27D5/00 ,  F27D11/02 ,  H01L21/67

CPC classification number: F27D7/06 ,  F27B17/0025 ,  F27D5/0037 ,  F27D11/02 ,  H01L21/67098 ,  H01L21/67109

Abstract: According to one aspect of the present disclosure, provided is a heat treatment apparatus configured to heat treat a plurality of objects to be treated which are held and supported by a holding and supporting unit while an inert gas is allowed to flow in a vertical type processing chamber from a bottom to a top thereof, wherein the processing chamber has a heating unit installed therearound. The heat treatment apparatus includes a gas supply system configured to supply the inert gas, wherein the gas supply system includes a gas supply header portion located in a lower end of the processing chamber to allow the inert gas to flow along a circumferential direction of the lower end; and a gas introduction portion in communication with the gas supply header portion to introduce the inert gas into the processing chamber.

Abstract translation: 根据本公开的一个方面，提供了一种热处理装置，其被配置为对待处理的多个物体进行热处理，所述待处理物体由保持和支撑单元保持和支撑，同时惰性气体允许在垂直型加工中流动 从其底部到顶部，其中处理室具有安装在其周围的加热单元。 该热处理装置具备供给惰性气体的气体供给系统，其特征在于，所述气体供给系统包括位于所述处理室的下端的气体供给头部，以使惰性气体沿着下部的周向流动 结束; 以及与气体供给头部连通以将惰性气体引入处理室的气体导入部。