公开(公告)号：US20240295821A1

公开(公告)日：2024-09-05

申请号：US18550535

申请日：2022-02-21

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Fujii ,  Soichiro Okada ,  Yasuyuki Ido ,  Makoto Muramatsu ,  Keisuke Yoshida ,  Nanoka Miyahara

IPC: G03F7/16 ,  H01L21/027

CPC classification number: G03F7/162 ,  G03F7/168 ,  H01L21/0274

Abstract: A substrate processing method includes forming a silicon carbide film on a spin on carbon film formed on a substrate; and forming a chemically amplified resist film for EUV on the silicon carbide film.

公开(公告)号：US11631581B2

公开(公告)日：2023-04-18

申请号：US16604744

申请日：2018-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto Muramatsu ,  Yusuke Saito ,  Hisashi Genjima ,  Hiroyuki Fujii

IPC: H01L21/324 ,  H01L21/02 ,  B05D3/06

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.