公开(公告)号：US20150318183A1

公开(公告)日：2015-11-05

申请号：US14689129

申请日：2015-04-17

Applicant: Tokyo Electron Limited

Inventor： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract translation: 公开了一种基板液体处理装置。 基板液体处理装置包括处理单元，喷嘴，甲硅烷基化液供给机构和阻塞流体供给机构。 处理单元通过向基板供给甲硅烷化液体，在基板上进行防水赋予处理。 喷嘴包括被配置为将甲硅烷化液体供给到位于处理单元中的基板的喷射口，以及甲硅烷基化液体流路，其中甲硅烷基化液体朝向喷射口流动。 甲硅烷基化液体供应机构通过甲硅烷基化液体供应管线将甲硅烷基化液体提供给喷嘴中的甲硅烷基化液体流动路径。 阻塞流体供应机构从喷射口外部的大气中提供阻塞流体，该阻塞流体在喷嘴内的甲硅烷基化液体流动通道内阻断甲硅烷基化液体。

公开(公告)号：US09922849B2

公开(公告)日：2018-03-20

申请号：US14689129

申请日：2015-04-17

Applicant: Tokyo Electron Limited

Inventor： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC: H01L21/67 ,  H01L21/31 ,  H01L21/306 ,  B05B12/14 ,  B05C11/115

CPC classification number: H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

公开(公告)号：US20240295821A1

公开(公告)日：2024-09-05

申请号：US18550535

申请日：2022-02-21

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Fujii ,  Soichiro Okada ,  Yasuyuki Ido ,  Makoto Muramatsu ,  Keisuke Yoshida ,  Nanoka Miyahara

IPC: G03F7/16 ,  H01L21/027

CPC classification number: G03F7/162 ,  G03F7/168 ,  H01L21/0274

Abstract: A substrate processing method includes forming a silicon carbide film on a spin on carbon film formed on a substrate; and forming a chemically amplified resist film for EUV on the silicon carbide film.