公开(公告)号：US20230253361A1

公开(公告)日：2023-08-10

申请号：US17669236

申请日：2022-02-10

申请人： Tokyo Electron Limited

发明人： Jack Rogers ,  Satohiko Hoshino ,  Nathan Antonovich

IPC分类号： H01L23/00

CPC分类号： H01L24/80 ,  H01L24/08 ,  H01L2224/08145 ,  H01L2224/80013 ,  H01L2224/8002 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/0509

摘要： Technologies for plasma oxidation protection during hybrid bonding of semiconductor devices includes forming a blocking layer on a metallic bonding pad formed in a bonding surface of a semiconductor device to be bonded and performing a surface treatment on the bonding surface to increase the bonding strength of the bonding surface and contemporaneously remove the blocking layer from the metallic bonding pad. In an illustrative embodiment, the blocking layer is embodied as a self-assembled monolayer (SAM), and the surface treatment is embodied as a surface activation plasma (SAP) treatment. A diffusion barrier layer, such as a silicon carbon nitride layer, may form the bonding surface in some embodiments to reduce diffusion of the metallic bonding pad during an annealing treatment of the bonding process.