公开(公告)号：US11837471B2

公开(公告)日：2023-12-05

申请号：US17118107

申请日：2020-12-10

Applicant: Tokyo Electron Limited

Inventor： Katie Lutker-Lee ,  Jake Kaminsky ,  Yu-Hao Tsai ,  Angelique Raley ,  Mingmei Wang

IPC: H01L21/033 ,  H01L21/027 ,  G03F7/20

CPC classification number: H01L21/0338 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  G03F7/2004

Abstract: A method of forming a semiconductor device includes depositing a first layer over a substrate and patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate. The method includes, in a plasma processing chamber, generating a first plasma from a gas mixture including SiCl4 and one or more of argon, helium, nitrogen, and hydrogen. The method includes exposing the substrate to the first plasma to deposit a second layer including silicon over the patterned layer.

公开(公告)号：US20210183656A1

公开(公告)日：2021-06-17

申请号：US17118107

申请日：2020-12-10

Applicant: Tokyo Electron Limited

Inventor： Katie Lutker-Lee ,  Jake Kaminsky ,  Yu-Hao Tsai ,  Angelique Raley ,  Mingmei Wang

IPC: H01L21/033 ,  H01L21/027

Abstract: A method of forming a semiconductor device includes depositing a first layer over a substrate and patterning the first layer using an extreme ultraviolet (EUV) lithography process to form a patterned layer and expose portions of the substrate. The method includes, in a plasma processing chamber, generating a first plasma from a gas mixture including SiCl4 and one or more of argon, helium, nitrogen, and hydrogen. The method includes exposing the substrate to the first plasma to deposit a second layer including silicon over the patterned layer.