公开(公告)号：US20240052483A1

公开(公告)日：2024-02-15

申请号：US18232926

申请日：2023-08-11

Applicant: Tokyo Electron Limited

Inventor： Kazuki GOTO ,  Yoshihiro KATO ,  Junya SUZUKI ,  Yuji OTSUKI

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45553

Abstract: A method of forming a SiOC-based film includes: preparing a substrate; forming a SiC-based film on the substrate by using a carbon precursor made of a carbon-containing gas and a silicon precursor made of a silicon-containing gas; forming the SiOC-based film by performing oxidation process on the SiC-based film on the substrate; and performing a processing with plasma of a gas containing a H2 gas on the SiOC-based film on the substrate, wherein the forming the SiC-based film is performed before the SiC-based film has a first given film thickness, the forming the SiC-based film and the forming the SiOC-based film by the oxidation process are executed once or multiple times before the SiOC-based film has a second given film thickness, and an operation of forming the SiOC-based film to have the second given film thickness and the performing the processing with the plasma are executed once or multiple times.