公开(公告)号：US20150214423A1

公开(公告)日：2015-07-30

申请号：US14481971

申请日：2014-09-10

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Shinya KIKUTA ,  Yoshihiro KATO ,  Koji NEISHI ,  Yoji IIZUKA ,  Hitoshi MIURA ,  Yusaku KASHIWAGI ,  Nobuaki TAKAHASHI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/24

CPC classification number: H01L33/42 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

Abstract: A method for manufacturing an optical device includes forming a mask on main surface of a first GaN layer such that the mask has one or more openings in first region on the main surface of the first layer, selectively growing first GaN in the opening such that core including the first GaN is formed on exposed portion of the first layer, forming an active layer on the core such that active region is formed, forming a second GaN layer on the active region, removing a portion of the mask covering second region, forming a first electrode in the second region on the first layer, forming a second electrode covering the second layer and extending onto the mask in third region on the first layer, forming a first pad on the first electrode, and forming a second pad in a pad-forming region of the second electrode in the third region.

Abstract translation: 一种光学器件的制造方法包括在第一GaN层的主表面上形成掩模，使得掩模在第一层的主表面上的第一区域中具有一个或多个开口，在开口中选择性地生长第一GaN，使得芯 包括在所述第一层的暴露部分上形成所述第一GaN，在所述芯上形成有源层，使得形成有源区，在所述有源区上形成第二GaN层，去除所述掩模覆盖第二区的一部分，形成 在第一层上的第二区域中的第一电极，形成覆盖第二层并在第一层上的第三区域延伸到掩模上的第二电极，在第一电极上形成第一焊盘， 在第三区域中形成第二电极的区域。

公开(公告)号：US20230399737A1

公开(公告)日：2023-12-14

申请号：US18032264

申请日：2021-10-08

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro KATO ,  Junya SUZUKI ,  Toshio HASEGAWA ,  Kouji SHIMOMURA

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/045 ,  H01J37/32449 ,  H01J37/32174 ,  H01L21/0214 ,  H01L21/02274 ,  H01L21/0228 ,  C23C16/505 ,  C23C16/36 ,  C23C16/45536 ,  H01J2237/332

Abstract: A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).

公开(公告)号：US20240052483A1

公开(公告)日：2024-02-15

申请号：US18232926

申请日：2023-08-11

Applicant: Tokyo Electron Limited

Inventor： Kazuki GOTO ,  Yoshihiro KATO ,  Junya SUZUKI ,  Yuji OTSUKI

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45553

Abstract: A method of forming a SiOC-based film includes: preparing a substrate; forming a SiC-based film on the substrate by using a carbon precursor made of a carbon-containing gas and a silicon precursor made of a silicon-containing gas; forming the SiOC-based film by performing oxidation process on the SiC-based film on the substrate; and performing a processing with plasma of a gas containing a H2 gas on the SiOC-based film on the substrate, wherein the forming the SiC-based film is performed before the SiC-based film has a first given film thickness, the forming the SiC-based film and the forming the SiOC-based film by the oxidation process are executed once or multiple times before the SiOC-based film has a second given film thickness, and an operation of forming the SiOC-based film to have the second given film thickness and the performing the processing with the plasma are executed once or multiple times.

公开(公告)号：US20230357923A1

公开(公告)日：2023-11-09

申请号：US18043766

申请日：2021-08-30

Applicant: Tokyo Electron Limited

Inventor： Kouji SHIMOMURA ,  Yoshihiro KATO ,  Toshio HASEGAWA ,  Junya SUZUKI

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

CPC classification number: C23C16/403 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0234 ,  H01L21/02178 ,  H01L21/0228

Abstract: A film forming method of forming a metal-containing aluminum oxide layer on a substrate having at least a metal layer on a surface thereof includes: a first operation of forming an aluminum oxide layer on the substrate with an aluminum-containing precursor and an oxidant; and a second operation of forming a metal oxide layer on the substrate with the oxidant and a precursor including a first metal other than aluminum. Assuming that a dielectric constant of only an oxide of the first metal is ε1 and a molar ratio of the first metal to all metals in the metal-containing aluminum oxide layer is X, the formed metal-containing aluminum oxide layer satisfies a following condition (1) or (2): X>⅓ and ε1

公开(公告)号：US20150214429A1

公开(公告)日：2015-07-30

申请号：US14607723

申请日：2015-01-28

Applicant: TOKYO ELECTRON LIMITED ,  NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY

Inventor： Yoji IIZUKA ,  Yoshihiro KATO ,  Koji NEISHI ,  Hitoshi MIURA ,  Shinya KIKUTA ,  Yusaku KASHIWAGI ,  Hiroshi AMANO ,  Yoshio HONDA

IPC: H01L33/20 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24

Abstract: There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer.

Abstract translation: 提供了一种棒状发光器件的制造方法，其包括：在第一导电型的GaN层上形成具有侧面和上表面的棒，所述棒由具有第一导电性的GaN制成 -类型; 选择性地生长在杆的上表面上的高电阻率层; 形成多量子阱层以覆盖所述杆和所述高电阻率层的侧表面和所述上表面; 以及形成第二导电类型的GaN层以覆盖多量子阱层。