公开(公告)号：US20240087885A1

公开(公告)日：2024-03-14

申请号：US18272938

申请日：2022-01-11

Applicant: Tokyo Electron Limited

Inventor： Munehito KAGAYA ,  Yuji OTSUKI ,  Yusuke SUZUKI

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02315 ,  C23C16/02 ,  C23C16/045 ,  C23C16/345 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/0228 ,  H01J2237/2001 ,  H01J2237/332

Abstract: A method of forming a silicon nitride film according to an aspect of the present disclosure forms a silicon nitride film in a recess formed in a surface of a substrate. The method includes a process of forming an adsorption-inhibiting region by exposing the substrate to plasma generated from an adsorption-inhibiting gas that contains a halogen gas and a non-halogen gas, a process of adsorbing a silicon-containing gas in a region other than the adsorption-inhibiting region, and a process of forming a silicon nitride film by exposing the substrate, on which the silicon-containing gas has been adsorbed, to plasma generated from a nitrogen-containing gas.

公开(公告)号：US20240371631A1

公开(公告)日：2024-11-07

申请号：US18556569

申请日：2022-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Yusuke SUZUKI ,  Yuji OTSUKI

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: A film forming method according to one aspect of the present disclosure includes: forming an adsorption-inhibiting region by supplying an adsorption-inhibiting gas to the substrate; adsorbing a silicon-containing gas onto a region excluding the adsorption-inhibiting region; and forming a silicon nitride film by exposing the substrate, onto which the silicon-containing gas has been adsorbed, to plasma generated from a nitriding gas, wherein the nitriding gas includes a nitrogen-containing gas and an inert gas, and the nitrogen-containing gas has a flow rate greater than a flow rate of the inert gas.

公开(公告)号：US20240321650A1

公开(公告)日：2024-09-26

申请号：US18579056

申请日：2022-07-07

Applicant: Tokyo Electron Limited

Inventor： Yuji OTSUKI

IPC: H01L21/66 ,  G01N21/3563 ,  H01L21/67

CPC classification number: H01L22/20 ,  G01N21/3563 ,  H01L21/67253 ,  G01N2021/3568

Abstract: In a first measuring process, P-polarized infrared light is emitted onto a substrate at a first incident angle at which an interference signal becomes smaller than a change by light absorption by the substrate, and light transmitted through or reflected from the substrate is measured. In a substrate processing process, substrate processing is performed on the substrate after the first measuring process. In a second measuring process, after substrate processing, P-polarized infrared light is emitted onto the substrate at a second incident angle at which an interference signal becomes smaller than a change caused by light absorption by the substrate, and light transmitted through or reflected from the substrate is measured. In an extraction process, a difference spectrum between the spectrum of the transmitted light or reflected light measured in the first measuring process and the transmitted light or reflected light measured in the second measuring process is extracted.

公开(公告)号：US20240052483A1

公开(公告)日：2024-02-15

申请号：US18232926

申请日：2023-08-11

Applicant: Tokyo Electron Limited

Inventor： Kazuki GOTO ,  Yoshihiro KATO ,  Junya SUZUKI ,  Yuji OTSUKI

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45553

Abstract: A method of forming a SiOC-based film includes: preparing a substrate; forming a SiC-based film on the substrate by using a carbon precursor made of a carbon-containing gas and a silicon precursor made of a silicon-containing gas; forming the SiOC-based film by performing oxidation process on the SiC-based film on the substrate; and performing a processing with plasma of a gas containing a H2 gas on the SiOC-based film on the substrate, wherein the forming the SiC-based film is performed before the SiC-based film has a first given film thickness, the forming the SiC-based film and the forming the SiOC-based film by the oxidation process are executed once or multiple times before the SiOC-based film has a second given film thickness, and an operation of forming the SiOC-based film to have the second given film thickness and the performing the processing with the plasma are executed once or multiple times.

公开(公告)号：US20250003874A1

公开(公告)日：2025-01-02

申请号：US18698613

申请日：2022-09-26

Applicant: Tokyo Electron Limited

Inventor： Yuji OTSUKI

IPC: G01N21/552 ,  C23C16/52 ,  G01N21/3563 ,  G01N21/84 ,  H01L21/66

Abstract: A measurement method includes: a first measurement step of irradiating a prism with infrared light and measuring reflected light totally reflected by the prism; a second measurement step of irradiating the prism with infrared light while the prism is arranged on a substrate and measuring reflected light totally reflected by a surface of the prism on the substrate; and a calculation step of calculating an absorbance spectrum from an intensity spectrum of infrared light for each wave number of the reflected light measured in the first measurement step and an intensity spectrum of infrared light for each wave number of the reflected light measured in the second measurement step.

公开(公告)号：US20230077599A1

公开(公告)日：2023-03-16

申请号：US17931936

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Yuji OTSUKI ,  Munehito KAGAYA ,  Yusuke SUZUKI

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455

Abstract: There is provided a film forming method of forming a film in a recess formed on a surface of a substrate. The film forming method includes: forming an adsorption-inhibiting region by supplying an adsorption-inhibiting gas to the substrate; adsorbing a silicon-containing gas to a region other than the adsorption-inhibiting region by supplying the silicon-containing gas to the substrate; and forming a silicon nitride film by exposing the substrate to a nitrogen-containing gas so that the nitrogen-containing gas reacts with the adsorbed silicon-containing gas, wherein the adsorbing the silicon-containing gas includes controlling a dose amount of the silicon-containing gas to be supplied to be equal to or greater than an adsorption saturation amount of the silicon-containing gas to be adsorbed on the substrate on which no adsorption-inhibiting region is formed.

公开(公告)号：US20250067664A1

公开(公告)日：2025-02-27

申请号：US18726285

申请日：2022-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masafumi ASANO ,  Takanobu KAITSUKA ,  Yuji OTSUKI ,  Yasutoshi UMEHARA

IPC: G01N21/3563 ,  B23K26/364 ,  C23C16/02 ,  C23C16/04 ,  C23C16/52 ,  G01N21/95

Abstract: There is provided a determination method comprising: a post-embedding measurement step for performing spectroscopic measurement on a substrate in which a pattern including a recess is formed, the recess having an embedding material embedded therein, and measuring an absorbance spectrum of the substrate having the embedding material embedded therein; and a determination step for determining an embedded state of the recess based on an integrated value of an intensity of the measured absorbance spectrum of the substrate at a plurality of wavenumbers.

公开(公告)号：US20250067556A1

公开(公告)日：2025-02-27

申请号：US18944260

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Yuji OTSUKI ,  Munehito KAGAYA ,  Yusuke SUZUKI

IPC: G01B11/06 ,  H01L21/66

Abstract: A method of measuring a film thickness includes: storing, in a storage, relationship information indicating a relationship between an absorbance spectrum of a substrate, which has a recess formed therein and is subjected to substrate processing, and a film thickness of a film in the substrate subjected to the substrate processing, the absorbance spectrum being within a range including a peak of at least one of LO (Longitudinal Optical) phonons or TO (Transverse Optical) phonons of the film present on a surface of the substrate; performing the substrate processing on the substrate having the recess formed therein; measuring the absorbance spectrum of the substrate subjected to the substrate processing; and deriving, based on the relationship information, the film thickness of the film present on the surface of the substrate subjected to the substrate processing, from the measured absorbance spectrum.

公开(公告)号：US20210398863A1

公开(公告)日：2021-12-23

申请号：US17303920

申请日：2021-06-10

Applicant: Tokyo Electron Limited

Inventor： Yuji OTSUKI ,  Munehito KAGAYA ,  Yusuke SUZUKI

IPC: H01L21/66 ,  G01N21/3563 ,  G01N21/84

Abstract: A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.