公开(公告)号：US20240120185A1

公开(公告)日：2024-04-11

申请号：US18544468

申请日：2023-12-19

申请人： Tokyo Electron Limited

发明人： Kazuki TSUCHIYA

IPC分类号： H01J37/32

CPC分类号： H01J37/32834 ,  H01J37/32633 ,  H01J37/32862 ,  H01J2237/3343

摘要： The chamber is internally provided with a stage on which a substrate is disposed, and an exhaust port connected to an exhaust system around the stage. The baffle is provided around the stage, and divides a space in the chamber into a processing space where plasma processing is performed on the substrate, and an exhaust space connected to the exhaust port. The switching mechanism switches the baffle between a shield state in which the baffle shields a plasma and a transmissive state in which the baffle allows a plasma to pass therethrough. The controller controls the switching mechanism to switch the baffle from the shield state to the transmissive state or from the transmissive state to the shield state.