公开(公告)号：US20160124324A1

公开(公告)日：2016-05-05

申请号：US14993647

申请日：2016-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi MIYAMOTO ,  Minoru KUBOTA

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/2028 ,  G03F7/2041

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Abstract translation: 讨论了通过将光照射到形成在待处理基板上的抗蚀剂膜的周围进行曝光处理的外围曝光方法。 该方法包括使待处理基板在水平面上旋转，使冷却剂气体与要旋转的被处理基板的抗蚀膜的周边接触，并冷却待处理的基板。 此外，该方法还包括测量待处理的基板的温度，其中当待处理的基板的温度等于或小于预定温度时，进行曝光处理。

公开(公告)号：US20130224639A1

公开(公告)日：2013-08-29

申请号：US13773741

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Kenichi MIYAMOTO ,  Minoru KUBOTA

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/2028 ,  G03F7/2041

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Abstract translation: 讨论了通过将光照射到形成在待处理基板上的抗蚀剂膜的周围进行曝光处理的外围曝光方法。 该方法包括使待处理基板在水平面上旋转，使冷却剂气体与要旋转的被处理基板的抗蚀膜的周边接触，并冷却待处理的基板。 此外，该方法还包括测量待处理的基板的温度，其中当待处理的基板的温度等于或小于预定温度时，进行曝光处理。