公开(公告)号：US20160167079A1

公开(公告)日：2016-06-16

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA ,  Minoru KUBOTA ,  Hiroyuki IDE

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00

CPC classification number: G05B15/02 ,  B05D1/005 ,  B05D3/042 ,  B05D3/0466 ,  B05D3/104 ,  G03F7/162 ,  H01L21/6715

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

Abstract translation: 提供了一种涂布方法，其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤：向晶片供给涂布溶液的溶剂，以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度（时间t1-t2）旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速（时刻t4-t5）的第二转速旋转晶片，使涂布液在晶片上扩散。 溶剂的供给继续进行，直到涂布液与溶剂的液膜接触（时刻t0-t3）为止。

公开(公告)号：US20160124324A1

公开(公告)日：2016-05-05

申请号：US14993647

申请日：2016-01-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi MIYAMOTO ,  Minoru KUBOTA

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/2028 ,  G03F7/2041

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Abstract translation: 讨论了通过将光照射到形成在待处理基板上的抗蚀剂膜的周围进行曝光处理的外围曝光方法。 该方法包括使待处理基板在水平面上旋转，使冷却剂气体与要旋转的被处理基板的抗蚀膜的周边接触，并冷却待处理的基板。 此外，该方法还包括测量待处理的基板的温度，其中当待处理的基板的温度等于或小于预定温度时，进行曝光处理。

公开(公告)号：US20130224639A1

公开(公告)日：2013-08-29

申请号：US13773741

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Kenichi MIYAMOTO ,  Minoru KUBOTA

IPC: G03F7/20

CPC classification number: G03F7/70875 ,  G03F7/2028 ,  G03F7/2041

Abstract: A peripheral exposure method for performing an exposure treatment by illuminating light to a periphery of a resist film formed on a substrate to be processed is discussed. The method includes rotating the substrate to be processed on a horizontal plane, bringing a coolant gas into contact with the periphery of the resist film of the substrate to be processed which is being rotated, and cooling the substrate to be processed. Further, the method also includes measuring a temperature of the substrate to be processed, wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure treatment is performed.

Abstract translation: 讨论了通过将光照射到形成在待处理基板上的抗蚀剂膜的周围进行曝光处理的外围曝光方法。 该方法包括使待处理基板在水平面上旋转，使冷却剂气体与要旋转的被处理基板的抗蚀膜的周边接触，并冷却待处理的基板。 此外，该方法还包括测量待处理的基板的温度，其中当待处理的基板的温度等于或小于预定温度时，进行曝光处理。

公开(公告)号：US20140030423A1

公开(公告)日：2014-01-30

申请号：US13949733

申请日：2013-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Minoru KUBOTA ,  Kousuke YOSHIHARA ,  Kouzou TACHIBANA

IPC: G03F7/16

CPC classification number: G03F7/16 ,  B05C5/0258 ,  B05C11/08 ,  B05C11/1002 ,  B08B3/08 ,  B08B3/10 ,  G03F7/162 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67178

Abstract: A liquid processing apparatus includes a substrate holding unit arranged within a processing cup and configured to horizontally hold a substrate, a rotating mechanism configured to rotate the substrate holding unit about a vertical axis, a processing liquid supply unit configured to supply a processing liquid onto a surface of the substrate, and an exhaust mechanism configured to discharge an atmospheric gas around the substrate. The exhaust mechanism includes an exhaust flow path connected to an exhaust port formed at the processing cup, a circulation flow path branched from the exhaust flow path and configured to communicate with the processing cup, a gas liquid separator, a first regulator valve installed at one end of the exhaust flow path, and a second regulator valve installed at the other end of the exhaust flow path.

Abstract translation: 液体处理装置包括布置在处理杯内并被配置为水平地保持基板的基板保持单元，被配置为使基板保持单元围绕垂直轴旋转的旋转机构，配置成将处理液供给到 基板的表面，以及构造成将基板周围的大气气体排出的排气机构。 排气机构包括连接到形成在处理杯处的排气口的排气流路，从排气流路分支配置成与处理杯连通​​的循环流路，气液分离器，安装在处理杯一侧的第一调节阀 排气流路的端部，以及安装在排气流路的另一端的第二调节阀。

公开(公告)号：US20190391496A1

公开(公告)日：2019-12-26

申请号：US16560137

申请日：2019-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koshi MUTA ,  Hideharu KYODA ,  Minoru KUBOTA

IPC: G03F7/30 ,  B05D1/00 ,  B05C11/08

Abstract: A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle.

公开(公告)号：US20170090292A1

公开(公告)日：2017-03-30

申请号：US15256948

申请日：2016-09-06

Applicant: Tokyo Electron Limited

Inventor： Minoru KUBOTA

IPC: G03F7/32

CPC classification number: G03F7/32 ,  B05D1/002 ,  B05D1/005 ,  G03F7/063 ,  G03F7/3021 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A developing treatment method of supplying a developing solution onto a substrate to develop a resist film on the substrate with a predetermined pattern exposed thereon: supplies pure water to a central portion of the substrate to form a puddle of the pure water, and then moves a nozzle in a radial direction passing through a center of the substrate while supplying a developing solution to the puddle of the pure water from the nozzle with a wetted surface of the nozzle in contact with the puddle of the pure water, to form a puddle of a diluted developing solution on the substrate; then rotates the substrate to diffuse the puddle of the diluted developing solution over an entire surface of the substrate; and then supplies a developing solution to the substrate to develop the substrate.

公开(公告)号：US20160154311A1

公开(公告)日：2016-06-02

申请号：US14953109

申请日：2015-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koshi MUTA ,  Hideharu KYODA ,  Minoru KUBOTA

IPC: G03F7/30 ,  G03F7/32

Abstract: A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle.

Abstract translation: 显影方法包括：在基材的中心部分中形成用纯水稀释的稀释显影液的液池; 通过加速基板的旋转，将稀释的显影液的液膜形成在基板的表面上，使稀释的显影液的液池在基板的整个表面上扩散; 然后将显影液供给到基板上。 提供显影解决方案包括：在具有液体接触表面的显影溶液供应喷嘴的同时，在显影液供应喷嘴和基底之间确保具有预定尺寸的间隙; 并且在显影液供给喷嘴的基板与液体接触面之间形成显影液的液池的同时，使显影液供给喷嘴在径向上移动，同时形成基板的中心。

公开(公告)号：US20150258570A1

公开(公告)日：2015-09-17

申请号：US14658461

申请日：2015-03-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Minoru KUBOTA

IPC: B05D1/00 ,  B05B12/02 ,  B05B3/02

CPC classification number: B05B12/02 ,  B05B13/0242 ,  B05B13/041 ,  B05D1/005 ,  G06F19/00 ,  H01L21/00 ,  H01L21/6715

Abstract: A coating apparatus includes: a rotation holding unit configured to hold and rotate a substrate; a coating liquid supply unit configured to supply a coating liquid onto a surface of the substrate; and a control unit configured to control the rotation holding unit and the coating liquid supply unit. The control unit performs: controlling the coating liquid supply unit to supply the coating liquid onto an encircling line surrounding a rotational center of the substrate while controlling the rotation holding unit to rotate the substrate; followed by controlling the coating liquid supply unit to supply the coating liquid onto a central area; and followed by controlling the rotation holding unit to rotate the substrate at an angular velocity greater than that when the coating liquid is supplied onto the encircling line.

Abstract translation: 涂覆装置包括：旋转保持单元，被配置为保持和旋转基底; 涂布液供给部，其将涂布液供给到所述基板的表面上; 以及控制单元，被配置为控制旋转保持单元和涂布液供应单元。 控制单元执行：控制涂布液供给单元，在控制旋转保持单元旋转基板的同时，将涂布液供给到围绕基板的旋转中心的环绕线上; 然后控制涂布液供给单元将涂布液供给到中央区域; 然后控制旋转保持单元以大于将涂布液供给到环绕线上的角速度旋转基板。

公开(公告)号：US20150165458A1

公开(公告)日：2015-06-18

申请号：US14568490

申请日：2014-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideo FUNAKOSHI ,  Minoru KUBOTA

IPC: B05B9/03 ,  B05B12/08 ,  B05B15/02

CPC classification number: B05B9/03 ,  B05B12/081 ,  B05B15/55 ,  H01L21/6715

Abstract: An embodiment of a liquid supplying apparatus for supplying a processing liquid to a process object includes: a processing liquid cartridge including: a reservoir chamber for storing the processing liquid; an ejecting port for ejecting the processing liquid stored in the reservoir chamber; a pusher unit for pushing the processing liquid stored in the reservoir chamber outward through the ejecting port; and a replenishing port for replenishing the processing liquid into the reservoir chamber; a standby unit having a standby area where the processing liquid cartridge is standing-by; a transport mechanism that transports the processing liquid cartridge between the standby unit and a location where the processing liquid cartridge supplies the processing liquid to the process object; and an actuating mechanism provided in the transport mechanism that drives the pusher unit to push the processing liquid stored in the reservoir chamber.

Abstract translation: 用于向处理对象物供给处理液的液体供给装置的一个实施例包括：处理液体盒，包括：储存室，用于储存处理液; 用于喷射存储在储存室中的处理液的排出口; 推动单元，用于通过所述排出口将存储在所述储存室中的处理液体向外推动; 以及用于将处理液体补充到储存室中的补充口; 备用单元，其具有待处理液体墨盒待机的区域; 运送机构，其将待处理液体盒与处理液盒向加工对象供给处理液体的位置之间运送; 以及驱动机构，其设置在所述输送机构中，其驱动所述推动器单元以推动储存在所述储存室中的处理液体。