公开(公告)号：US12051587B2

公开(公告)日：2024-07-30

申请号：US17346638

申请日：2021-06-14

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Nakamura ,  Masahide Tadokoro ,  Masashi Enomoto

IPC: H01L21/02 ,  B05C5/02 ,  B05C11/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/302 ,  H01L21/306 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/02343 ,  B05C5/022 ,  B05C11/00 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/302 ,  H01L21/306 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67276 ,  H01L21/67288 ,  H01L22/12 ,  H01L22/20 ,  G03F7/168

Abstract: A substrate processing apparatus includes a periphery removal unit configured to remove a peripheral portion of a film formed on a surface of a substrate; a profile acquisition unit configured to acquire a removal width profile indicating a relationship between a position in a circumferential direction of the substrate and a width of a portion of the substrate from which the film is removed; and a factor estimation unit configured to output factor information indicating a factor of an error in the width based on the removal width profile.

公开(公告)号：US20230314960A1

公开(公告)日：2023-10-05

申请号：US18025170

申请日：2021-08-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masashi ENOMOTO ,  Hideaki KASHIWAGI ,  Naoto NAKAMURA

IPC: G03F7/20 ,  G06T7/62 ,  G06T7/13 ,  G06T7/73 ,  G01B11/03 ,  G01B11/02

CPC classification number: G03F7/70625 ,  G06T7/62 ,  G06T7/13 ,  G06T7/74 ,  G03F7/2028 ,  G03F7/7085 ,  G01B11/03 ,  G01B11/022 ,  G01B2210/56

Abstract: An apparatus includes: an capturing part that captures a peripheral edge portion of a substrate including a reference substrate and a workpiece substrate, so as to acquire captured images of the reference and workpiece substrates; a first calculation part that calculates a theoretical peripheral edge position of the reference substrate in the captured image of the reference substrate with reference to a center thereof, a second calculation part that calculates a theoretical peripheral edge position of the workpiece substrate in the captured image of the workpiece substrate based on the theoretical peripheral edge position of the reference substrate and the captured image of the workpiece substrate; a setting part that sets processing parameters for the peripheral edge portion of the substrate based on the theoretical peripheral edge position of the workpiece substrate; and a processing part that processes the peripheral edge portion of the substrate based on the processing parameters.

公开(公告)号：US20180067396A1

公开(公告)日：2018-03-08

申请号：US15255237

申请日：2016-09-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： CHRISTOPHER B. SHING ,  JOYCE C. LIU ,  RICHARD D. KAPLAN ,  TIMOTHY J. WILTSHIRE ,  DARIUS BROWN

IPC: G03F7/20 ,  G03F7/40 ,  G03F7/32

CPC classification number: G03F7/2028 ,  G03F7/32 ,  G03F7/40

Abstract: Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.

公开(公告)号：US09627203B2

公开(公告)日：2017-04-18

申请号：US15137964

申请日：2016-04-25

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takuya Hagiwara

IPC: H01L21/00 ,  H01L21/027 ,  H01L21/02 ,  H01L21/324 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

CPC classification number: H01L21/0274 ,  G03F7/0392 ,  G03F7/094 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2022 ,  G03F7/2028 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/327 ,  G03F7/38 ,  H01L21/0206 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28017 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/324 ,  H01L21/76224 ,  H01L29/66568

Abstract: The reliability of a semiconductor device is improved. In a manufacturing method, a film to be processed is formed over a circular semiconductor substrate, and a resist layer whose surface has a water-repellent property is formed thereover. Subsequently, the water-repellent property of the resist layer in the outer peripheral region of the circular semiconductor substrate is lowered by selectively performing first wafer edge exposure on the outer peripheral region of the semiconductor substrate, and then liquid immersion exposure is performed on the resist layer. Subsequently, second wafer edge exposure is performed on the outer peripheral region of the circular semiconductor substrate, and then the resist layer, on which the first wafer edge exposure, the liquid immersion exposure, and the second wafer edge exposure have been performed, is developed, so that the film to be processed is etched by using the developed resist layer.

公开(公告)号：US20160209763A1

公开(公告)日：2016-07-21

申请号：US14994686

申请日：2016-01-13

Applicant: CANON KABUSHIKI KAISHA

Inventor： Nobuyuki Saito

IPC: G03F7/20

CPC classification number: G03F7/2028

Abstract: An exposure apparatus exposes a peripheral portion of a substrate to light, and includes an optical system configured to irradiate the substrate with the light, a stage configured to hold the substrate and be moved in a direction to position the substrate in a direction perpendicular to the optical axis of the optical system, and a controller configured to cause the stage to be moved. The controller moves the stage based on information about a distance between the optical system and the peripheral portion in a direction parallel to the optical axis and a telecentricity of the optical system so that a predetermined portion of the substrate is irradiated with the light from the optical system.

Abstract translation: 曝光装置将基板的周边部分暴露于光，并且包括被配置为用光照射基板的光学系统，被配置为保持基板并沿着垂直于...的方向定位基板的方向移动的台 光学系统的光轴，以及被配置为使台架移动的控制器。 控制器基于关于光学系统和外围部分之间的距离的信息在平行于光轴的方向和光学系统的远心度上移动台，使得基板的预定部分被来自光学的光照射 系统。

公开(公告)号：US08658937B2

公开(公告)日：2014-02-25

申请号：US12986914

申请日：2011-01-07

Applicant: Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

Inventor： Kenneth J. Harte ,  Ronald P. Millman, Jr. ,  Victoria M. Chaplick ,  David J. Elliott ,  Eugene O. Degenkolb ,  Murray L. Tardif

IPC: B23K26/36 ,  H01L21/00

CPC classification number: H01L21/268 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0676 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/123 ,  B23K26/142 ,  G03F7/2028 ,  H01L21/02087 ,  H01L21/6708

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer. Wafer edge processing with this invention replaces existing solvent and/or abrasive methods and thus will improve die yield.

Abstract translation: 公开了用于处理衬底边缘的方法和装置，其克服了半导体制造中使用的常规边缘处理方法和系统的限制。 本发明的边缘处理方法和装置包括激光和光学系统，用于在大气中将辐射束引导到由卡盘支撑的旋转基板上。 光学系统准确和精确地引导光束从衬底的顶部边缘，顶部斜面，顶点，底部斜面和底部边缘去除或转换有机或无机膜，膜堆，残余物或颗粒。 可选的气体注入器系统将气体引导到衬底边缘以帮助反应。 通过包围反应部位的排气管除去加工副产物。 本发明允许对边缘排除区进行精确控制，导致晶片上可用的管芯数量的增加。 用本发明的晶片边缘加工替代了现有的溶剂和/或研磨方法，从而提高了模具产量。

公开(公告)号：US08084194B2

公开(公告)日：2011-12-27

申请号：US11675869

申请日：2007-02-16

Applicant: Tomoyuki Takeishi ,  Yuji Kobayashi

Inventor： Tomoyuki Takeishi ,  Yuji Kobayashi

IPC: B05C11/10 ,  B08B1/04 ,  B08B3/04

CPC classification number: H01L21/67051 ,  G03F7/2028 ,  G03F7/3021 ,  H01L21/6715

Abstract: A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting.

Abstract translation: 一种基板边缘处理方法，包括：在处理对象基板上形成处理对象膜，向处理对象膜上的预定位置施加能量线，在所述处理对象膜上形成潜像，对所述处理对象基板进行加热， 在加工对象膜上形成潜像，在加热后显影加工对象膜，检查在显影后是否存在处理对象基板的边缘残留物，清洗处理对象基板的末端以除去残留物 在处理对象基材的边缘被确定为检查中有缺陷。

公开(公告)号：US20110250540A1

公开(公告)日：2011-10-13

申请号：US12758043

申请日：2010-04-12

Applicant: Pei-Lin Huang ,  Chun-Yen Huang ,  Yi-Ming Wang

Inventor： Pei-Lin Huang ,  Chun-Yen Huang ,  Yi-Ming Wang

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/2028 ,  G03F7/70425 ,  G03F7/70466 ,  Y10S430/143

Abstract: A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.

Abstract translation: 半导体光刻工艺。 将光致抗蚀剂膜涂覆在基材上。 对光致抗蚀剂膜进行暴露曝光，以将光致抗蚀剂薄膜穿过衬底暴露于具有较低剂量的第一辐射。 然后使用光掩模对光致抗蚀剂膜进行主曝光，以一步一步地将光致抗蚀剂膜曝光，并以相对较高的剂量将其扫描到第二次辐射。 烘烤后，显影光致抗蚀剂膜。

公开(公告)号：US20090047608A1

公开(公告)日：2009-02-19

申请号：US12191108

申请日：2008-08-13

Applicant: W. Thomas Novak ,  Daniel Gene Smith

Inventor： W. Thomas Novak ,  Daniel Gene Smith

IPC: G03F7/20 ,  G03B27/42

CPC classification number: G03F7/2028 ,  G03F7/70216 ,  G03F7/70425 ,  G03F7/70991

Abstract: An edge shot (“ES”) exposure apparatus (14) for transferring edge features (ef) to a substrate edge region (222) of a substrate (18) includes a feature transferer (55), and an ES wafer stage assembly (62). The feature transferer (55) transfers one or more edge features (ef) to the substrate edge region (222), while the ES wafer stage assembly (62) rotates the substrate (18) about a substrate axis (23). This allows the feature transferer (55) to transfer the edge features (ef) to a plurality of alternative locations in the substrate edge region (222). The ES exposure apparatus (14) can be used in conjunction with a primary exposure apparatus (12) that transfers usable features (uf) to a substrate usable region (220) of the substrate (18). With this design, the primary exposure apparatus (12) can be transferring usable features (uf) to a first substrate (18A) while the ES exposure apparatus (14) is transferring edge features (ef) to a second substrate (18B). As a result thereof, the overall throughput is improved because the primary exposure apparatus (12) does not need to transfer features to the substrate edge region (222).

Abstract translation: 用于将边缘特征（ef）传送到基板（18）的基板边缘区域（222）的边缘投射（“ES”）曝光装置（14）包括特征转移器（55）和ES晶片台组件 ）。 特征转移器（55）将一个或多个边缘特征（ef）传送到衬底边缘区域（222），而ES晶片台组件（62）围绕衬底轴线（23）旋转衬底（18）。 这允许特征转移器（55）将边缘特征（ef）传送到衬底边缘区域（222）中的多个替代位置。 ES曝光装置（14）可以与将可用特征（uf）传送到基板（18）的基板可用区域（220）的一次曝光装置（12）结合使用。 通过这种设计，当ES曝光装置（14）将边缘特征（ef）传送到第二基板（18B）时，一次曝光装置（12）可以将可用特征（uf）传送到第一基板（18A）。 结果，由于一次曝光装置（12）不需要将特征传送到基板边缘区域（222），所以整体吞吐量得到改善。

公开(公告)号：US20080193654A1

公开(公告)日：2008-08-14

申请号：US11574888

申请日：2005-09-13

Applicant: Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

Inventor： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC: B05D3/02 ,  B05B17/04

CPC classification number: H01L21/67184 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178

Abstract: A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.

Abstract translation: 在抗蚀剂涂布单元中设置用于施加激光的激光照射单元。 在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。 此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。 在外围部分的抗蚀剂膜干燥之后，继续施加激光，并且溶剂供应喷嘴移动到晶片的边缘部分上方的位置，并将溶剂供应到晶片的边缘部分上的抗蚀剂膜 。 溶剂的供应溶解并除去晶片边缘部分上的抗蚀剂膜。