公开(公告)号：US20210287922A1

公开(公告)日：2021-09-16

申请号：US17189691

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Risako MATSUDA ,  Shinobu KINOSHITA ,  Manabu OIE ,  Keita SHOUJI

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/02

Abstract: A substrate processing method of processing a substrate using a gas supplied to a chamber includes: (a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into of the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).

公开(公告)号：US20220375724A1

公开(公告)日：2022-11-24

申请号：US17749149

申请日：2022-05-20

Applicant: Tokyo Electron Limited

Inventor： Manabu OIE ,  Takanori BANSE ,  Toru HISAMATSU

IPC: H01J37/32

Abstract: A plasma processing method includes: (a) mounting a substrate including a first mask layer, which is a removal target, formed on a first layer with a metal-containing layer that is included therein to be partially exposed, on a stage disposed inside a processing container of the plasma processing apparatus; (b) supplying a process gas containing one or more of fluorocarbon gas and hydrofluorocarbon gas into the processing container; (c) supplying a first radio-frequency power that forms a plasma from the process gas into the processing container; (d) supplying a second radio-frequency power having a frequency lower than a frequency of the first radio-frequency power to the stage after a predetermined time is elapsed from stop of the first radio-frequency power; and (e) repeating (c) and (d).