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公开(公告)号：US20230034399A1
公开(公告)日：2023-02-02
申请号：US17873374
申请日：2022-07-26
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Keita SHOUJI , Kazuaki TAKAAI
Abstract: A substrate processing system includes a chamber group including chambers configured to process a substrate in a desired process gas, a gas box group including gas boxes configured to supply the process gas to each of the chambers, a flow rate measuring device configured to measure a flow rate of the process gas supplied from the gas box group, and an exhaust device connected to the chamber group and the flow rate measuring device. The flow rate measuring device includes a measuring instrument and a measurement pipe connected to the gas box group and the measuring instrument and configured to flow the process gas through the gas box group and the measuring instrument. The measurement pipe includes branch pipes connected to each of the gas boxes, a main pipe connected to each of the branch pipes and the measuring instrument, and branch pipe valves provided in the branch pipes.
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公开(公告)号：US20210302257A1
公开(公告)日：2021-09-30
申请号：US17196272
申请日：2021-03-09
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Keita SHOUJI
Abstract: There is provided a method of calibrating multiple chamber pressure sensors of a substrate processing system. The substrate processing system includes: multiple chambers; multiple chamber pressure sensors; multiple gas suppliers configured to supply a gas to an internal space of the multiple chambers; multiple exhausters connected to the internal spaces of the multiple chambers via multiple exhaust flow paths; and multiple first gas flow paths. The method includes: acquiring a third volume, which is a sum of a first volume and a second volume; acquiring a first pressure change rate of the internal space of a selected chamber; calculating a second pressure change rate of the internal space of the selected chamber; and calibrating the selected chamber pressure sensor such that a difference between the first pressure change rate and the second pressure change rate is within a preset range.
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公开(公告)号：US20210287922A1
公开(公告)日：2021-09-16
申请号：US17189691
申请日：2021-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Shinobu KINOSHITA , Manabu OIE , Keita SHOUJI
IPC: H01L21/67 , H01L21/66 , H01L21/3065 , H01L21/02
Abstract: A substrate processing method of processing a substrate using a gas supplied to a chamber includes: (a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into of the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).
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Patent Agency Ranking
4.发明申请公开(公告)号：US20210257197A1
公开(公告)日：2021-08-19
申请号：US17178273
申请日：2021-02-18
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Jun HIROSE
Abstract: A substrate processing method is provided. The substrate processing method includes (a) placing a substrate on a substrate support disposed in a chamber, the substrate having a plurality of flow sensors on a surface of the substrate; (b) supplying a processing gas into the chamber; and (c) measuring magnitudes and directions of flows of the processing gas on the surface of the substrate using the plurality of flow sensors.
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5.发明申请公开(公告)号：US20200292403A1
公开(公告)日：2020-09-17
申请号：US16806628
申请日：2020-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Norihiko AMIKURA , Kazuyuki MIURA , Keita SHOUJI
Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.
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公开(公告)号：US20210301942A1
公开(公告)日：2021-09-30
申请号：US17189804
申请日：2021-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako MATSUDA , Norihiko AMIKURA
Abstract: A gas inspection method includes: inputting a signal for opening a secondary valve; measuring, by a secondary pressure gauge, a pressure P on a downstream side of an orifice of a flow rate controller at a time point when a period t elapses from the input of the signal for opening the secondary valve; measuring, by the secondary pressure gauge, a standard deviation σ of the pressure P on the downstream side of the orifice of the flow rate controller at the time point when the period t elapses from the input of the signal for opening the secondary valve; and determining whether or not an open degree of the secondary valve is normal by comparing the pressure P and the standard deviation σ of the pressure P with a threshold value P0 of the pressure and a threshold value σ0 of the standard deviation of the pressure.
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公开(公告)号：US20200278225A1
公开(公告)日：2020-09-03
申请号：US16645898
申请日：2019-05-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Norihiko AMIKURA , Risako MATSUDA , Kazuyuki MIURA
IPC: G01F1/50
Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.
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公开(公告)号：US20190333742A1
公开(公告)日：2019-10-31
申请号：US16393462
申请日：2019-04-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Risako MATSUDA
IPC: H01J37/32 , H01L21/311 , H01L21/027
Abstract: A method includes forming a film of a compound on an inner wall of a gas supply line by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature at which the first compound and the second compound are polymerized in a state where a first gas containing the first compound and a second gas containing the second compound are supplied to the gas supply line, and removing the film by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized after predetermined processing is performed on a target object in a processing chamber by a processing gas supplied into the processing chamber through the gas supply line having the film. The first compound is isocyanate. The second compound is amine or a compound having a hydroxyl group.
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