公开(公告)号：US20220059361A1

公开(公告)日：2022-02-24

申请号：US17445625

申请日：2021-08-23

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Taku GOHIRA ,  Hyoseok SONG ,  Masahiro TADOKORO ,  Kentaro NUMATA ,  Keita YAEGASHI

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method for providing an etch profile is provided. The etching method includes preparing a substrate in which a laminate film is formed, the laminate film including silicon oxide films and silicon films stacked in alternation. The etching method includes cooling a surface temperature of the substrate to −40° C. or less. The etching method includes forming a plasma from gas containing hydrogen and fluorine, based on radio frequency power for plasma formation. The etching method includes etching the laminate film with the formed plasma.